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Article: Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate

TitleCorrelated band-edge emissions of ZnO nanorods and GaN underlying substrate
Authors
Ning, JXu, SWang, RZhang, FLe, HChua, S
Issue Date2009
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, 2009, v. 48 n. 2 How to Cite?
DOI: http://dx.doi.org/10.1143/JJAP.48.021102
AbstractVertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59629
ISSN
0021-4922
2021 Impact Factor: 1.491
2020 SCImago Journal Rankings: 0.487
ISI Accession Number ID
WOS:000264955900030
Funding AgencyGrant Number
Hong Kong RGC-GRFHKU 7056/06P
Funding Information:

The work was financially supported by the Hong Kong RGC-GRF Grant under contact No. HKU 7056/06P. Two of the authors, JQN and SJX, wish to thank ShenLei SHI for helpful discussion, and XueMin DAI for calculating the correlation coefficient of the both emission intensities.

References
References in Scopus
Grants
Multi-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures

 

DC FieldValueLanguage
dc.contributor.authorNing, Jen_HK
dc.contributor.authorXu, Sen_HK
dc.contributor.authorWang, Ren_HK
dc.contributor.authorZhang, Fen_HK
dc.contributor.authorLe, Hen_HK
dc.contributor.authorChua, Sen_HK
dc.date.accessioned2010-05-31T03:54:06Z-
dc.date.available2010-05-31T03:54:06Z-
dc.date.issued2009en_HK
dc.identifier.citationJapanese Journal Of Applied Physics, 2009, v. 48 n. 2en_HK
dc.identifier.issn0021-4922en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59629-
dc.description.abstractVertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.en_HK
dc.languageengen_HK
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_HK
dc.relation.ispartofJapanese Journal of Applied Physicsen_HK
dc.titleCorrelated band-edge emissions of ZnO nanorods and GaN underlying substrateen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-4922&volume=48&spage=021102: 1&epage=4&date=2009&atitle=Correlated+band-edge+emissions+of+ZnO+nanorods+and+GaN+underlying+substrateen_HK
dc.identifier.emailNing, J: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, S: sjxu@hku.hken_HK
dc.identifier.authorityNing, J=rp00769en_HK
dc.identifier.authorityXu, S=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1143/JJAP.48.021102en_HK
dc.identifier.scopuseid_2-s2.0-60849121944en_HK
dc.identifier.hkuros154588en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-60849121944&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000264955900030-
dc.publisher.placeJapanen_HK
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures-
dc.identifier.scopusauthoridNing, J=15845992800en_HK
dc.identifier.scopusauthoridXu, S=7404439005en_HK
dc.identifier.scopusauthoridWang, R=7405339075en_HK
dc.identifier.scopusauthoridZhang, F=35511573900en_HK
dc.identifier.scopusauthoridLe, H=8727379200en_HK
dc.identifier.scopusauthoridChua, S=35516064500en_HK
dc.identifier.issnl0021-4922-

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