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Article: Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate

TitleCorrelated band-edge emissions of ZnO nanorods and GaN underlying substrate
Authors
Issue Date2009
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, 2009, v. 48 n. 2 How to Cite?
AbstractVertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59629
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong RGC-GRFHKU 7056/06P
Funding Information:

The work was financially supported by the Hong Kong RGC-GRF Grant under contact No. HKU 7056/06P. Two of the authors, JQN and SJX, wish to thank ShenLei SHI for helpful discussion, and XueMin DAI for calculating the correlation coefficient of the both emission intensities.

References
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DC FieldValueLanguage
dc.contributor.authorNing, Jen_HK
dc.contributor.authorXu, Sen_HK
dc.contributor.authorWang, Ren_HK
dc.contributor.authorZhang, Fen_HK
dc.contributor.authorLe, Hen_HK
dc.contributor.authorChua, Sen_HK
dc.date.accessioned2010-05-31T03:54:06Z-
dc.date.available2010-05-31T03:54:06Z-
dc.date.issued2009en_HK
dc.identifier.citationJapanese Journal Of Applied Physics, 2009, v. 48 n. 2en_HK
dc.identifier.issn0021-4922en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59629-
dc.description.abstractVertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. © 2009 The Japan Society of Applied Physics.en_HK
dc.languageengen_HK
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_HK
dc.relation.ispartofJapanese Journal of Applied Physicsen_HK
dc.titleCorrelated band-edge emissions of ZnO nanorods and GaN underlying substrateen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-4922&volume=48&spage=021102: 1&epage=4&date=2009&atitle=Correlated+band-edge+emissions+of+ZnO+nanorods+and+GaN+underlying+substrateen_HK
dc.identifier.emailNing, J: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, S: sjxu@hku.hken_HK
dc.identifier.authorityNing, J=rp00769en_HK
dc.identifier.authorityXu, S=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1143/JJAP.48.021102en_HK
dc.identifier.scopuseid_2-s2.0-60849121944en_HK
dc.identifier.hkuros154588en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-60849121944&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000264955900030-
dc.publisher.placeJapanen_HK
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures-
dc.identifier.scopusauthoridNing, J=15845992800en_HK
dc.identifier.scopusauthoridXu, S=7404439005en_HK
dc.identifier.scopusauthoridWang, R=7405339075en_HK
dc.identifier.scopusauthoridZhang, F=35511573900en_HK
dc.identifier.scopusauthoridLe, H=8727379200en_HK
dc.identifier.scopusauthoridChua, S=35516064500en_HK

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