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Article: Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix
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TitleAnnealing effect on the optical properties of implanted silicon in a silicon nitride matrix
 
AuthorsCen, ZH3
Chen, TP3
Ding, L3
Liu, Y
Yang, M3
Wong, JI3
Liu, Z3
Liu, YC2
Fung, S1
 
Issue Date2008
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2008, v. 93 n. 2 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2962989
 
AbstractOptical properties of implanted Si in a silicon nitride (Si 3N 4) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E 2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si 3N 4 matrix caused by the annealing. © 2008 American Institute of Physics.
 
ISSN0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
DOIhttp://dx.doi.org/10.1063/1.2962989
 
ISI Accession Number IDWOS:000257796100099
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorYang, M
 
dc.contributor.authorWong, JI
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorLiu, YC
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-05-31T03:54:03Z
 
dc.date.available2010-05-31T03:54:03Z
 
dc.date.issued2008
 
dc.description.abstractOptical properties of implanted Si in a silicon nitride (Si 3N 4) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E 2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si 3N 4 matrix caused by the annealing. © 2008 American Institute of Physics.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationApplied Physics Letters, 2008, v. 93 n. 2 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2962989
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2962989
 
dc.identifier.eissn1077-3118
 
dc.identifier.hkuros147102
 
dc.identifier.isiWOS:000257796100099
 
dc.identifier.issn0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
dc.identifier.issue2
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-47549115582
 
dc.identifier.urihttp://hdl.handle.net/10722/59626
 
dc.identifier.volume93
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.titleAnnealing effect on the optical properties of implanted silicon in a silicon nitride matrix
 
dc.typeArticle
 
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<description.abstract>Optical properties of implanted Si in a silicon nitride (Si 3N 4) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E 2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si 3N 4 matrix caused by the annealing. &#169; 2008 American Institute of Physics.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Singapore Institute of Manufacturing Technology
  3. Nanyang Technological University