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Article: Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix

TitleAnnealing effect on the optical properties of implanted silicon in a silicon nitride matrix
Authors
Cen, ZHChen, TPDing, LLiu, YYang, MWong, JILiu, ZLiu, YCFung, S
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 93 n. 2, article no. 023122 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2962989
AbstractOptical properties of implanted Si in a silicon nitride (Si 3N 4) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E 2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si 3N 4 matrix caused by the annealing. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59626
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000257796100099
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-05-31T03:54:03Z-
dc.date.available2010-05-31T03:54:03Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 93 n. 2, article no. 023122-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59626-
dc.description.abstractOptical properties of implanted Si in a silicon nitride (Si 3N 4) thin film have been determined with spectroscopic ellipsometry based on the Tauc-Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E 2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si 3N 4 matrix caused by the annealing. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.titleAnnealing effect on the optical properties of implanted silicon in a silicon nitride matrixen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=93&spage=023122: 1&epage=3&date=2008&atitle=Annealing+effect+on+the+optical+properties+of+implanted+silicon+in+a+silicon+nitride+matrixen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2962989en_HK
dc.identifier.scopuseid_2-s2.0-47549115582en_HK
dc.identifier.hkuros147102en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-47549115582&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue2en_HK
dc.identifier.spagearticle no. 023122-
dc.identifier.epagearticle no. 023122-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000257796100099-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36065513000en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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