File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Conference Paper: Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
  • Basic View
  • Metadata View
  • XML View
TitleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
 
AuthorsCen, ZH3
Chen, TP3
Ding, L3
Liu, Y3 2
Wong, JI3
Yang, M3
Liu, Z3
Goh, WP4
Zhu, FR4
Fung, S1
 
KeywordsAnnealing
Conduction bands
Dangling bonds
Electroluminescence
Electron-hole recombination
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2009, v. 105 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3148248
 
AbstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.
 
ISSN0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
DOIhttp://dx.doi.org/10.1063/1.3148248
 
ISI Accession Number IDWOS:000267599600017
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorWong, JI
 
dc.contributor.authorYang, M
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorGoh, WP
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-05-31T03:53:51Z
 
dc.date.available2010-05-31T03:53:51Z
 
dc.date.issued2009
 
dc.description.abstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3148248
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3148248
 
dc.identifier.hkuros164707
 
dc.identifier.isiWOS:000267599600017
 
dc.identifier.issn0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
dc.identifier.issue12
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-67650239754
 
dc.identifier.urihttp://hdl.handle.net/10722/59615
 
dc.identifier.volume105
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsCopyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 105 n. 12, article no. 123101 and may be found at http://link.aip.org/link/doi/10.1063/1.3148248
 
dc.subjectAnnealing
 
dc.subjectConduction bands
 
dc.subjectDangling bonds
 
dc.subjectElectroluminescence
 
dc.subjectElectron-hole recombination
 
dc.titleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
 
dc.typeConference_Paper
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Cen, ZH</contributor.author>
<contributor.author>Chen, TP</contributor.author>
<contributor.author>Ding, L</contributor.author>
<contributor.author>Liu, Y</contributor.author>
<contributor.author>Wong, JI</contributor.author>
<contributor.author>Yang, M</contributor.author>
<contributor.author>Liu, Z</contributor.author>
<contributor.author>Goh, WP</contributor.author>
<contributor.author>Zhu, FR</contributor.author>
<contributor.author>Fung, S</contributor.author>
<date.accessioned>2010-05-31T03:53:51Z</date.accessioned>
<date.available>2010-05-31T03:53:51Z</date.available>
<date.issued>2009</date.issued>
<identifier.citation>Journal Of Applied Physics, 2009, v. 105 n. 12</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/59615</identifier.uri>
<description.abstract>Influence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (&#8801; Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. &#169; 2009 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Journal of Applied Physics. Copyright &#169; American Institute of Physics.</rights>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<rights>Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 105 n. 12, article no. 123101 and may be found at http://link.aip.org/link/doi/10.1063/1.3148248</rights>
<subject>Annealing</subject>
<subject>Conduction bands</subject>
<subject>Dangling bonds</subject>
<subject>Electroluminescence</subject>
<subject>Electron-hole recombination</subject>
<title>Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing</title>
<type>Conference_Paper</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0021-8979&amp;volume=105&amp;issue=12, article no. 123101&amp;spage=&amp;epage=&amp;date=2009&amp;atitle=Evolution+of+electroluminescence+from+multiple+Si-implanted+silicon+nitride+films+with+thermal+annealing</identifier.openurl>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.3148248</identifier.doi>
<identifier.scopus>eid_2-s2.0-67650239754</identifier.scopus>
<identifier.hkuros>164707</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-67650239754&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>105</identifier.volume>
<identifier.issue>12</identifier.issue>
<identifier.isi>WOS:000267599600017</identifier.isi>
<publisher.place>United States</publisher.place>
<bitstream.url>http://hub.hku.hk/bitstream/10722/59615/1/content.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Institute of Materials Research and Engineering, A-Star, Singapore