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Conference Paper: Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

TitleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
Authors
KeywordsAnnealing
Conduction bands
Dangling bonds
Electroluminescence
Electron-hole recombination
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 105 n. 12 How to Cite?
AbstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59615
ISSN
2014 Impact Factor: 2.183
2014 SCImago Journal Rankings: 0.912
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorGoh, WPen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-05-31T03:53:51Z-
dc.date.available2010-05-31T03:53:51Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 12en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59615-
dc.description.abstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 105 n. 12, article no. 123101 and may be found at http://link.aip.org/link/doi/10.1063/1.3148248-
dc.subjectAnnealing-
dc.subjectConduction bands-
dc.subjectDangling bonds-
dc.subjectElectroluminescence-
dc.subjectElectron-hole recombination-
dc.titleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealingen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&issue=12, article no. 123101&spage=&epage=&date=2009&atitle=Evolution+of+electroluminescence+from+multiple+Si-implanted+silicon+nitride+films+with+thermal+annealingen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3148248en_HK
dc.identifier.scopuseid_2-s2.0-67650239754en_HK
dc.identifier.hkuros164707en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-67650239754&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue12en_HK
dc.identifier.isiWOS:000267599600017-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridGoh, WP=26025931500en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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