Conference Paper: Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

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TitleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
AuthorsCen, ZH3
Chen, TP3
Ding, L3
Liu, Y2 3
Wong, JI3
Yang, M3
Liu, Z3
Goh, WP4
Zhu, FR4
Fung, S1
KeywordsAnnealing
Conduction bands
Dangling bonds
Electroluminescence
Electron-hole recombination
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
CitationJournal Of Applied Physics, 2009, v. 105 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3148248
AbstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.
ISSN0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
DOIhttp://dx.doi.org/10.1063/1.3148248
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorCen, ZH
dc.contributor.authorChen, TP
dc.contributor.authorDing, L
dc.contributor.authorLiu, Y
dc.contributor.authorWong, JI
dc.contributor.authorYang, M
dc.contributor.authorLiu, Z
dc.contributor.authorGoh, WP
dc.contributor.authorZhu, FR
dc.contributor.authorFung, S
dc.date.accessioned2010-05-31T03:53:51Z
dc.date.available2010-05-31T03:53:51Z
dc.date.issued2009
dc.description.abstractInfluence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3148248
dc.identifier.doihttp://dx.doi.org/10.1063/1.3148248
dc.identifier.hkuros164707
dc.identifier.isiWOS:000267599600017
dc.identifier.issn0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
dc.identifier.issue12
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-67650239754
dc.identifier.urihttp://hdl.handle.net/10722/59615
dc.identifier.volume105
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Applied Physics
dc.relation.referencesReferences in Scopus
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.rightsCopyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 105 n. 12, article no. 123101 and may be found at http://link.aip.org/link/doi/10.1063/1.3148248
dc.subjectAnnealing
dc.subjectConduction bands
dc.subjectDangling bonds
dc.subjectElectroluminescence
dc.subjectElectron-hole recombination
dc.titleEvolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
dc.typeConference_Paper
Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Institute of Materials Research and Engineering, A-Star, Singapore