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Article: Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
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TitleStrong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
 
AuthorsCen, ZH3
Chen, TP3
Ding, L3
Liu, Y2 3
Wong, JI3
Yang, M3
Liu, Z3
Goh, WP4
Zhu, FR4
Fung, S1
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2009, v. 94 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3068002
 
AbstractStrong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.3068002
 
ISI Accession Number IDWOS:000262971800002
Funding AgencyGrant Number
Ministry of Education SingaporeARC 1/04 a
National Research Foundation of SingaporeNRFGCRP 2007-01
Funding Information:

This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRFGCRP 2007-01.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorWong, JI
 
dc.contributor.authorYang, M
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorGoh, WP
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-05-31T03:53:47Z
 
dc.date.available2010-05-31T03:53:47Z
 
dc.date.issued2009
 
dc.description.abstractStrong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3068002
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3068002
 
dc.identifier.hkuros154338
 
dc.identifier.isiWOS:000262971800002
Funding AgencyGrant Number
Ministry of Education SingaporeARC 1/04 a
National Research Foundation of SingaporeNRFGCRP 2007-01
Funding Information:

This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRFGCRP 2007-01.

 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-59349084722
 
dc.identifier.urihttp://hdl.handle.net/10722/59612
 
dc.identifier.volume94
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.titleStrong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. University of Electronic Science and Technology of China
  3. Nanyang Technological University
  4. Institute of Materials Research and Engineering, A-Star, Singapore