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Article: Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

TitleStrong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
Authors
Cen, ZHChen, TPDing, LLiu, YWong, JIYang, MLiu, ZGoh, WPZhu, FRFung, S
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 4, article no. 041102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3068002
AbstractStrong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59612
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000262971800002
Funding AgencyGrant Number
Ministry of Education SingaporeARC 1/04 a
National Research Foundation of SingaporeNRFGCRP 2007-01
Funding Information:

This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRFGCRP 2007-01.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorGoh, WPen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-05-31T03:53:47Z-
dc.date.available2010-05-31T03:53:47Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 4, article no. 041102-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59612-
dc.description.abstractStrong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.titleStrong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&spage=041102: 1&epage=3&date=2009&atitle=Strong+violet+and+green-yellow+electroluminescence+from+silicon+nitride+thin+films+multiply+implanted+with+Si+ionsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3068002en_HK
dc.identifier.scopuseid_2-s2.0-59349084722en_HK
dc.identifier.hkuros154338en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-59349084722&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue4en_HK
dc.identifier.spagearticle no. 041102-
dc.identifier.epagearticle no. 041102-
dc.identifier.isiWOS:000262971800002-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridGoh, WP=26025931500en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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