Article: Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
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- Publisher Website: 10.1063/1.3068002
- Scopus: eid_2-s2.0-59349084722
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| Title | Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Cen, ZH3 Chen, TP3 Ding, L3 Liu, Y2 3 Wong, JI3 Yang, M3 Liu, Z3 Goh, WP4 Zhu, FR4 Fung, S1 | ||||||
| Issue Date | 2009 | ||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| Citation | Applied Physics Letters, 2009, v. 94 n. 4 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3068002 | ||||||
| Abstract | Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics. | ||||||
| ISSN | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| DOI | http://dx.doi.org/10.1063/1.3068002 | ||||||
| ISI Accession Number ID | WOS:000262971800002
Funding Information: This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRFGCRP 2007-01. | ||||||
| References | References in Scopus |
| dc.contributor.author | Cen, ZH | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||||
| dc.contributor.author | Ding, L | ||||||
| dc.contributor.author | Liu, Y | ||||||
| dc.contributor.author | Wong, JI | ||||||
| dc.contributor.author | Yang, M | ||||||
| dc.contributor.author | Liu, Z | ||||||
| dc.contributor.author | Goh, WP | ||||||
| dc.contributor.author | Zhu, FR | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.date.accessioned | 2010-05-31T03:53:47Z | ||||||
| dc.date.available | 2010-05-31T03:53:47Z | ||||||
| dc.date.issued | 2009 | ||||||
| dc.description.abstract | Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 °C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed. © 2009 American Institute of Physics. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Applied Physics Letters, 2009, v. 94 n. 4 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3068002 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3068002 | ||||||
| dc.identifier.hkuros | 154338 | ||||||
| dc.identifier.isi | WOS:000262971800002
Funding Information: This work has been financially supported by the Academic Research Fund from the Ministry of Education Singapore under Project No. ARC 1/04 and by the National Research Foundation of Singapore under Project No. NRFGCRP 2007-01. | ||||||
| dc.identifier.issn | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||
| dc.identifier.issue | 4 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-59349084722 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/59612 | ||||||
| dc.identifier.volume | 94 | ||||||
| dc.language | eng | ||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Applied Physics Letters | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Applied Physics Letters. Copyright © American Institute of Physics. | ||||||
| dc.title | Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- University of Electronic Science and Technology of China
- Nanyang Technological University
- Institute of Materials Research and Engineering, A-Star, Singapore