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Article: Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

TitleInfluence of electron irradiation on hydrothermally grown zinc oxide single crystals
Authors
Issue Date2008
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2008, v. 23 n. 9 How to Cite?
AbstractThe resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm -2, and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm -2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm -2, the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400°C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed. © 2008 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/59601
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
Funding AgencyGrant Number
RGC CERG7032/04P
Germany/Hong Kong Research SchemeGHK026/07
Small Project Fund, HKU200707176013
Funding Information:

This work was supported by the RGC CERG (no.7032/04P), the Germany/Hong Kong Research Scheme (no. GHK026/07) and the Small Project Fund, HKU (no. 200707176013).

References

 

DC FieldValueLanguage
dc.contributor.authorLu, LWen_HK
dc.contributor.authorSo, CKen_HK
dc.contributor.authorZhu, CYen_HK
dc.contributor.authorGu, QLen_HK
dc.contributor.authorLi, CJen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-05-31T03:53:35Z-
dc.date.available2010-05-31T03:53:35Z-
dc.date.issued2008en_HK
dc.identifier.citationSemiconductor Science And Technology, 2008, v. 23 n. 9en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59601-
dc.description.abstractThe resistivity of hydrothermally grown ZnO single crystals increased from ∼10 3 Ω cm to ∼10 6 Ω cm after 1.8 MeV electron irradiation with a fluence of ∼10 16 cm -2, and to ∼10 9 Ω cm as the fluence increased to ∼10 18 cm -2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10 18 cm -2, the normalized TSC signal increased by a factor of ∼100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400°C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed. © 2008 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleInfluence of electron irradiation on hydrothermally grown zinc oxide single crystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=23&spage=095028: 1&epage=6&date=2008&atitle=Influence+of+electron+irradiation+on+hydrothermally+grown+zinc+oxide+single+crystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/23/9/095028en_HK
dc.identifier.scopuseid_2-s2.0-51849157720en_HK
dc.identifier.hkuros152372en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-51849157720&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000258875200028-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLu, LW=7403962804en_HK
dc.identifier.scopusauthoridSo, CK=36979762800en_HK
dc.identifier.scopusauthoridZhu, CY=14007977600en_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridLi, CJ=8677140500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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