File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Article: Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions
  • Basic View
  • Metadata View
  • XML View
TitleOptical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions
 
AuthorsCen, ZH2
Chen, TP2
Ding, L2
Ye, JD3
Liu, Y2
Yang, M2
Wong, JI2
Liu, Z2
Fung, S1
 
Issue Date2009
 
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
 
CitationElectrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40 [How to Cite?]
DOI: http://dx.doi.org/10.1149/1.3039952
 
AbstractThe measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society.
 
ISSN1099-0062
2013 Impact Factor: 2.149
2013 SCImago Journal Rankings: 0.899
 
DOIhttp://dx.doi.org/10.1149/1.3039952
 
ISI Accession Number IDWOS:000261698500016
Funding AgencyGrant Number
Ministry of Education Singapore1/04
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by the Ministry of Education Singapore under project ARC no. 1/04 and by the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCen, ZH
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorYe, JD
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorYang, M
 
dc.contributor.authorWong, JI
 
dc.contributor.authorLiu, Z
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-05-31T03:53:25Z
 
dc.date.available2010-05-31T03:53:25Z
 
dc.date.issued2009
 
dc.description.abstractThe measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationElectrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40 [How to Cite?]
DOI: http://dx.doi.org/10.1149/1.3039952
 
dc.identifier.doihttp://dx.doi.org/10.1149/1.3039952
 
dc.identifier.epageH40
 
dc.identifier.hkuros154219
 
dc.identifier.isiWOS:000261698500016
Funding AgencyGrant Number
Ministry of Education Singapore1/04
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by the Ministry of Education Singapore under project ARC no. 1/04 and by the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

 
dc.identifier.issn1099-0062
2013 Impact Factor: 2.149
2013 SCImago Journal Rankings: 0.899
 
dc.identifier.issue2
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-57649242638
 
dc.identifier.spageH38
 
dc.identifier.urihttp://hdl.handle.net/10722/59592
 
dc.identifier.volume12
 
dc.languageeng
 
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofElectrochemical and Solid-State Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsElectrochemical and Solid-State Letters. Copyright © Electrochemical Society, Inc.
 
dc.titleOptical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Cen, ZH</contributor.author>
<contributor.author>Chen, TP</contributor.author>
<contributor.author>Ding, L</contributor.author>
<contributor.author>Ye, JD</contributor.author>
<contributor.author>Liu, Y</contributor.author>
<contributor.author>Yang, M</contributor.author>
<contributor.author>Wong, JI</contributor.author>
<contributor.author>Liu, Z</contributor.author>
<contributor.author>Fung, S</contributor.author>
<date.accessioned>2010-05-31T03:53:25Z</date.accessioned>
<date.available>2010-05-31T03:53:25Z</date.available>
<date.issued>2009</date.issued>
<identifier.citation>Electrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40</identifier.citation>
<identifier.issn>1099-0062</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/59592</identifier.uri>
<description.abstract>The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at &#8764;680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100&#176;C, and it is attributed to the formation of stable Si nanoclusters. &#169; 2008 The Electrochemical Society.</description.abstract>
<language>eng</language>
<publisher>Electrochemical Society, Inc. The Journal&apos;s web site is located at http://scitation.aip.org/ESL/</publisher>
<relation.ispartof>Electrochemical and Solid-State Letters</relation.ispartof>
<rights>Electrochemical and Solid-State Letters. Copyright &#169; Electrochemical Society, Inc.</rights>
<title>Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=1099-0062&amp;volume=12&amp;spage=H38&amp;epage=H40&amp;date=2009&amp;atitle=Optical+transmission+and+photoluminescence+of+silicon+nitride+thin+films+implanted+with+Si+ions</identifier.openurl>
<description.nature>link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1149/1.3039952</identifier.doi>
<identifier.scopus>eid_2-s2.0-57649242638</identifier.scopus>
<identifier.hkuros>154219</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-57649242638&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>12</identifier.volume>
<identifier.issue>2</identifier.issue>
<identifier.spage>H38</identifier.spage>
<identifier.epage>H40</identifier.epage>
<identifier.isi>WOS:000261698500016</identifier.isi>
<publisher.place>United States</publisher.place>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null