Article: Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions
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- Publisher Website: 10.1149/1.3039952
- Scopus: eid_2-s2.0-57649242638
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| Title | Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions | ||||||
|---|---|---|---|---|---|---|---|
| Authors | Cen, ZH2 Chen, TP2 Ding, L2 Ye, JD3 Liu, Y2 Yang, M2 Wong, JI2 Liu, Z2 Fung, S1 | ||||||
| Issue Date | 2009 | ||||||
| Publisher | Electrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/ | ||||||
| Citation | Electrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40 [How to Cite?] DOI: http://dx.doi.org/10.1149/1.3039952 | ||||||
| Abstract | The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society. | ||||||
| ISSN | 1099-0062 2011 Impact Factor: 1.995 2011 SCImago Journal Rankings: 0.220 | ||||||
| DOI | http://dx.doi.org/10.1149/1.3039952 | ||||||
| ISI Accession Number ID | WOS:000261698500016
Funding Information: This work has been financially supported by the Ministry of Education Singapore under project ARC no. 1/04 and by the National Research Foundation of Singapore under project NRF-G-CRP 2007-01. | ||||||
| References | References in Scopus |
| dc.contributor.author | Cen, ZH | ||||||
|---|---|---|---|---|---|---|---|
| dc.contributor.author | Chen, TP | ||||||
| dc.contributor.author | Ding, L | ||||||
| dc.contributor.author | Ye, JD | ||||||
| dc.contributor.author | Liu, Y | ||||||
| dc.contributor.author | Yang, M | ||||||
| dc.contributor.author | Wong, JI | ||||||
| dc.contributor.author | Liu, Z | ||||||
| dc.contributor.author | Fung, S | ||||||
| dc.date.accessioned | 2010-05-31T03:53:25Z | ||||||
| dc.date.available | 2010-05-31T03:53:25Z | ||||||
| dc.date.issued | 2009 | ||||||
| dc.description.abstract | The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society. | ||||||
| dc.description.nature | Link_to_subscribed_fulltext | ||||||
| dc.identifier.citation | Electrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40 [How to Cite?] DOI: http://dx.doi.org/10.1149/1.3039952 | ||||||
| dc.identifier.doi | http://dx.doi.org/10.1149/1.3039952 | ||||||
| dc.identifier.epage | H40 | ||||||
| dc.identifier.hkuros | 154219 | ||||||
| dc.identifier.isi | WOS:000261698500016
Funding Information: This work has been financially supported by the Ministry of Education Singapore under project ARC no. 1/04 and by the National Research Foundation of Singapore under project NRF-G-CRP 2007-01. | ||||||
| dc.identifier.issn | 1099-0062 2011 Impact Factor: 1.995 2011 SCImago Journal Rankings: 0.220 | ||||||
| dc.identifier.issue | 2 | ||||||
| dc.identifier.openurl | | ||||||
| dc.identifier.scopus | eid_2-s2.0-57649242638 | ||||||
| dc.identifier.spage | H38 | ||||||
| dc.identifier.uri | http://hdl.handle.net/10722/59592 | ||||||
| dc.identifier.volume | 12 | ||||||
| dc.language | eng | ||||||
| dc.publisher | Electrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/ | ||||||
| dc.publisher.place | United States | ||||||
| dc.relation.ispartof | Electrochemical and Solid-State Letters | ||||||
| dc.relation.references | References in Scopus | ||||||
| dc.rights | Electrochemical and Solid-State Letters. Copyright © Electrochemical Society, Inc. | ||||||
| dc.title | Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions | ||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Nanyang Technological University
- null