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Article: Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions

TitleOptical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions
Authors
Issue Date2009
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40 How to Cite?
Abstract
The measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/59592
ISSN
2013 Impact Factor: 2.149
2013 SCImago Journal Rankings: 0.899
ISI Accession Number ID
Funding AgencyGrant Number
Ministry of Education Singapore1/04
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by the Ministry of Education Singapore under project ARC no. 1/04 and by the National Research Foundation of Singapore under project NRF-G-CRP 2007-01.

References

 

Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null
DC FieldValueLanguage
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYe, JDen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-05-31T03:53:25Z-
dc.date.available2010-05-31T03:53:25Z-
dc.date.issued2009en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2009, v. 12 n. 2, p. H38-H40en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59592-
dc.description.abstractThe measurements of optical transmission, photoluminescence (PL), and PL excitation (PLE) of Si-implanted silicon nitride thin films annealed at various temperatures have been conducted. A red PL band at ∼680 nm is largely enhanced by the Si implantation followed by thermal annealing. The excitation of the red PL band is attributed to the transitions between the Si-bond-related states of and *, while the emission of the red PL band is believed to be from the radiative recombination associated with defect states which are largely increased by the Si ion implantation. Another excitation transition contributing to the red PL band, which is evidenced by the PLE peak at 425 nm, emerges after the annealing at 1100°C, and it is attributed to the formation of stable Si nanoclusters. © 2008 The Electrochemical Society.en_HK
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rightsElectrochemical and Solid-State Letters. Copyright © Electrochemical Society, Inc.en_HK
dc.titleOptical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1099-0062&volume=12&spage=H38&epage=H40&date=2009&atitle=Optical+transmission+and+photoluminescence+of+silicon+nitride+thin+films+implanted+with+Si+ionsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.3039952en_HK
dc.identifier.scopuseid_2-s2.0-57649242638en_HK
dc.identifier.hkuros154219en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-57649242638&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue2en_HK
dc.identifier.spageH38en_HK
dc.identifier.epageH40en_HK
dc.identifier.isiWOS:000261698500016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYe, JD=8096401000en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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