Article: Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy

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TitleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
AuthorsDing, L1 4
Li, BK4
He, HT4
Ge, WK3 4
Wang, JN4
Ning, JQ2
Dai, XM2
Ling, CC2
Xu, SJ2
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
CitationJournal Of Applied Physics, 2009, v. 105 n. 5 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3087762
AbstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.
ISSN0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
DOIhttp://dx.doi.org/10.1063/1.3087762
ReferencesReferences in Scopus
GrantsMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures
DC Field
Value
dc.contributor.authorDing, L
dc.contributor.authorLi, BK
dc.contributor.authorHe, HT
dc.contributor.authorGe, WK
dc.contributor.authorWang, JN
dc.contributor.authorNing, JQ
dc.contributor.authorDai, XM
dc.contributor.authorLing, CC
dc.contributor.authorXu, SJ
dc.date.accessioned2010-05-31T03:53:23Z
dc.date.available2010-05-31T03:53:23Z
dc.date.issued2009
dc.description.abstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.
dc.description.grantMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures
dc.description.grantcode82640
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 5 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3087762
dc.identifier.doihttp://dx.doi.org/10.1063/1.3087762
dc.identifier.hkuros155100
dc.identifier.isiWOS:000264156300031
Funding AgencyGrant Number
Council of HKSAR603704
HKU 7056/06P
Funding Information:

The authors are grateful to the financial support of Research Grant Council of HKSAR via Grant Nos. 603704 and HKU 7056/06P.

dc.identifier.issn0021-8979
2011 Impact Factor: 2.168
2011 SCImago Journal Rankings: 0.139
dc.identifier.issue5
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-62549103395
dc.identifier.urihttp://hdl.handle.net/10722/59590
dc.identifier.volume105
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
dc.publisher.placeUnited States
dc.relation.ispartofJournal of Applied Physics
dc.relation.referencesReferences in Scopus
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
dc.titleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
dc.typeArticle
Author Affiliations
  1. null
  2. The University of Hong Kong
  3. Sun Yat-Sen University
  4. Hong Kong University of Science and Technology