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Article: Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
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TitleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
 
AuthorsDing, L1 4
Li, BK4
He, HT4
Ge, WK4 3
Wang, JN4
Ning, JQ2
Dai, XM2
Ling, CC2
Xu, SJ2
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2009, v. 105 n. 5 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3087762
 
AbstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.3087762
 
ISI Accession Number IDWOS:000264156300031
Funding AgencyGrant Number
Council of HKSAR603704
HKU 7056/06P
Funding Information:

The authors are grateful to the financial support of Research Grant Council of HKSAR via Grant Nos. 603704 and HKU 7056/06P.

 
ReferencesReferences in Scopus
 
GrantsMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures
 
DC FieldValue
dc.contributor.authorDing, L
 
dc.contributor.authorLi, BK
 
dc.contributor.authorHe, HT
 
dc.contributor.authorGe, WK
 
dc.contributor.authorWang, JN
 
dc.contributor.authorNing, JQ
 
dc.contributor.authorDai, XM
 
dc.contributor.authorLing, CC
 
dc.contributor.authorXu, SJ
 
dc.date.accessioned2010-05-31T03:53:23Z
 
dc.date.available2010-05-31T03:53:23Z
 
dc.date.issued2009
 
dc.description.abstractA series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. © 2009 American Institute of Physics.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 5 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3087762
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3087762
 
dc.identifier.hkuros155100
 
dc.identifier.isiWOS:000264156300031
Funding AgencyGrant Number
Council of HKSAR603704
HKU 7056/06P
Funding Information:

The authors are grateful to the financial support of Research Grant Council of HKSAR via Grant Nos. 603704 and HKU 7056/06P.

 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.issue5
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-62549103395
 
dc.identifier.urihttp://hdl.handle.net/10722/59590
 
dc.identifier.volume105
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.titleClassification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Ding, L</contributor.author>
<contributor.author>Li, BK</contributor.author>
<contributor.author>He, HT</contributor.author>
<contributor.author>Ge, WK</contributor.author>
<contributor.author>Wang, JN</contributor.author>
<contributor.author>Ning, JQ</contributor.author>
<contributor.author>Dai, XM</contributor.author>
<contributor.author>Ling, CC</contributor.author>
<contributor.author>Xu, SJ</contributor.author>
<date.accessioned>2010-05-31T03:53:23Z</date.accessioned>
<date.available>2010-05-31T03:53:23Z</date.available>
<date.issued>2009</date.issued>
<identifier.citation>Journal Of Applied Physics, 2009, v. 105 n. 5</identifier.citation>
<identifier.issn>0021-8979</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/59590</identifier.uri>
<description.abstract>A series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined. &#169; 2009 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://jap.aip.org/jap/staff.jsp</publisher>
<relation.ispartof>Journal of Applied Physics</relation.ispartof>
<rights>Journal of Applied Physics. Copyright &#169; American Institute of Physics.</rights>
<title>Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0021-8979&amp;volume=105&amp;spage=053511: 1&amp;epage=4&amp;date=2009&amp;atitle=Classification+of+bound+exciton+complexes+in+bulk+ZnO+by+magnetophotoluminescence+spectroscopy</identifier.openurl>
<description.nature>link_to_subscribed_fulltext</description.nature>
<identifier.doi>10.1063/1.3087762</identifier.doi>
<identifier.scopus>eid_2-s2.0-62549103395</identifier.scopus>
<identifier.hkuros>155100</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-62549103395&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>105</identifier.volume>
<identifier.issue>5</identifier.issue>
<identifier.isi>WOS:000264156300031</identifier.isi>
<publisher.place>United States</publisher.place>
<relation.project>Multi-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures</relation.project>
</item>
Author Affiliations
  1. null
  2. The University of Hong Kong
  3. Sun Yat-Sen University
  4. Hong Kong University of Science and Technology