File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals

TitleCMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals
Authors
Liu, YChen, TPYang, MCen, ZHChen, XBLi, YBFung, S
Issue Date2009
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2009, v. 95 n. 3, p. 753-756 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-008-5046-5
AbstractElectroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10 -5 s. No obvious change in the light emission intensity was observed after 10 6 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration. © 2009 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/59586
ISSN
0947-8396
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.446
ISI Accession Number ID
WOS:000264809500022
Funding AgencyGrant Number
National Natural Science Foundation of China60806040
Ministry of Education, Singapore,ARC 1/04
National Research Foundation of SingaporeNRF-G-CRP2007-01
Funding Information:

This work has been financially supported by the National Natural Science Foundation of China, under project No. 60806040, the Ministry of Education, Singapore, under project No. ARC 1/04 and the National Research Foundation of Singapore under project No. NRF-G-CRP2007-01.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorCen, ZHen_HK
dc.contributor.authorChen, XBen_HK
dc.contributor.authorLi, YBen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-05-31T03:53:17Z-
dc.date.available2010-05-31T03:53:17Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2009, v. 95 n. 3, p. 753-756en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59586-
dc.description.abstractElectroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10 -5 s. No obvious change in the light emission intensity was observed after 10 6 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration. © 2009 Springer-Verlag.en_HK
dc.languageengen_HK
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.titleCMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-008-5046-5en_HK
dc.identifier.scopuseid_2-s2.0-63949086333en_HK
dc.identifier.hkuros156092en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63949086333&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue3en_HK
dc.identifier.spage753en_HK
dc.identifier.epage756en_HK
dc.identifier.isiWOS:000264809500022-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridCen, ZH=23098969400en_HK
dc.identifier.scopusauthoridChen, XB=25226924100en_HK
dc.identifier.scopusauthoridLi, YB=36071994600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike3914053-
dc.identifier.issnl0947-8396-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats