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Article: Electronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial films

TitleElectronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial films
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 105, p. 07E514: 1-3 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/59565
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-05-31T03:52:53Z-
dc.date.available2010-05-31T03:52:53Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 105, p. 07E514: 1-3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59565-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.titleElectronic structures and Hall effect in low-doped La0.9Hf0.1MnO3 epitaxial filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&spage=07E514: 1&epage=3&date=2009&atitle=Electronic+structures+and+Hall+effect+in+low-doped+La0.9Hf0.1MnO3+epitaxial+filmsen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.identifier.hkuros159929en_HK

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