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Article: Topological anderson insulator

TitleTopological anderson insulator
Authors
Issue Date2009
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2009, v. 102 n. 13, article no. 136806 How to Cite?
AbstractDisorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal-insulator transition and the integral and fractional quantum Hall effects. In this Letter, we investigate the role of disorder in the context of the recently discovered topological insulator, which possesses a pair of helical edge states with opposing spins moving in opposite directions and exhibits the phenomenon of quantum spin Hall effect. We predict an unexpected and nontrivial quantum phase termed "topological Anderson insulator," which is obtained by introducing impurities in a two-dimensional metal; here disorder not only causes metal-insulator transition, as anticipated, but is fundamentally responsible for creating extended edge states. We determine the phase diagram of the topological Anderson insulator and outline its experimental consequences. © 2009 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/59562
ISSN
2023 Impact Factor: 8.1
2023 SCImago Journal Rankings: 3.040
ISI Accession Number ID
Funding AgencyGrant Number
Council of Hong KongHKU 7037/08P
HKU 10/CRF/08
Funding Information:

The authors would like to thank F. C. Zhang and Yshai Avishai for helpful discussions. This work was supported by the Research Grant Council of Hong Kong under Grant No. HKU 7037/08P and HKU 10/CRF/08.

References

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_HK
dc.contributor.authorChu, RLen_HK
dc.contributor.authorJain, JKen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2010-05-31T03:52:49Z-
dc.date.available2010-05-31T03:52:49Z-
dc.date.issued2009en_HK
dc.identifier.citationPhysical Review Letters, 2009, v. 102 n. 13, article no. 136806-
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59562-
dc.description.abstractDisorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal-insulator transition and the integral and fractional quantum Hall effects. In this Letter, we investigate the role of disorder in the context of the recently discovered topological insulator, which possesses a pair of helical edge states with opposing spins moving in opposite directions and exhibits the phenomenon of quantum spin Hall effect. We predict an unexpected and nontrivial quantum phase termed "topological Anderson insulator," which is obtained by introducing impurities in a two-dimensional metal; here disorder not only causes metal-insulator transition, as anticipated, but is fundamentally responsible for creating extended edge states. We determine the phase diagram of the topological Anderson insulator and outline its experimental consequences. © 2009 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.titleTopological anderson insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=102&spage=136806: 1&epage=4&date=2009&atitle=Topological+Anderson+insulatoren_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevLett.102.136806en_HK
dc.identifier.scopuseid_2-s2.0-64649101431en_HK
dc.identifier.hkuros155274en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-64649101431&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume102en_HK
dc.identifier.issue13en_HK
dc.identifier.spagearticle no. 136806-
dc.identifier.epagearticle no. 136806-
dc.identifier.eissn1079-7114-
dc.identifier.isiWOS:000264888600055-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, J=26643417100en_HK
dc.identifier.scopusauthoridChu, RL=25925722300en_HK
dc.identifier.scopusauthoridJain, JK=7102269763en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.issnl0031-9007-

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