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Article: Topological anderson insulator
Title | Topological anderson insulator | ||||
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Authors | |||||
Issue Date | 2009 | ||||
Publisher | American Physical Society. The Journal's web site is located at http://prl.aps.org | ||||
Citation | Physical Review Letters, 2009, v. 102 n. 13, article no. 136806 How to Cite? | ||||
Abstract | Disorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal-insulator transition and the integral and fractional quantum Hall effects. In this Letter, we investigate the role of disorder in the context of the recently discovered topological insulator, which possesses a pair of helical edge states with opposing spins moving in opposite directions and exhibits the phenomenon of quantum spin Hall effect. We predict an unexpected and nontrivial quantum phase termed "topological Anderson insulator," which is obtained by introducing impurities in a two-dimensional metal; here disorder not only causes metal-insulator transition, as anticipated, but is fundamentally responsible for creating extended edge states. We determine the phase diagram of the topological Anderson insulator and outline its experimental consequences. © 2009 The American Physical Society. | ||||
Persistent Identifier | http://hdl.handle.net/10722/59562 | ||||
ISSN | 2023 Impact Factor: 8.1 2023 SCImago Journal Rankings: 3.040 | ||||
ISI Accession Number ID |
Funding Information: The authors would like to thank F. C. Zhang and Yshai Avishai for helpful discussions. This work was supported by the Research Grant Council of Hong Kong under Grant No. HKU 7037/08P and HKU 10/CRF/08. | ||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, J | en_HK |
dc.contributor.author | Chu, RL | en_HK |
dc.contributor.author | Jain, JK | en_HK |
dc.contributor.author | Shen, SQ | en_HK |
dc.date.accessioned | 2010-05-31T03:52:49Z | - |
dc.date.available | 2010-05-31T03:52:49Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Physical Review Letters, 2009, v. 102 n. 13, article no. 136806 | - |
dc.identifier.issn | 0031-9007 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/59562 | - |
dc.description.abstract | Disorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal-insulator transition and the integral and fractional quantum Hall effects. In this Letter, we investigate the role of disorder in the context of the recently discovered topological insulator, which possesses a pair of helical edge states with opposing spins moving in opposite directions and exhibits the phenomenon of quantum spin Hall effect. We predict an unexpected and nontrivial quantum phase termed "topological Anderson insulator," which is obtained by introducing impurities in a two-dimensional metal; here disorder not only causes metal-insulator transition, as anticipated, but is fundamentally responsible for creating extended edge states. We determine the phase diagram of the topological Anderson insulator and outline its experimental consequences. © 2009 The American Physical Society. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at http://prl.aps.org | en_HK |
dc.relation.ispartof | Physical Review Letters | en_HK |
dc.title | Topological anderson insulator | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=102&spage=136806: 1&epage=4&date=2009&atitle=Topological+Anderson+insulator | en_HK |
dc.identifier.email | Shen, SQ: sshen@hkucc.hku.hk | en_HK |
dc.identifier.authority | Shen, SQ=rp00775 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevLett.102.136806 | en_HK |
dc.identifier.scopus | eid_2-s2.0-64649101431 | en_HK |
dc.identifier.hkuros | 155274 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-64649101431&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 102 | en_HK |
dc.identifier.issue | 13 | en_HK |
dc.identifier.spage | article no. 136806 | - |
dc.identifier.epage | article no. 136806 | - |
dc.identifier.eissn | 1079-7114 | - |
dc.identifier.isi | WOS:000264888600055 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Li, J=26643417100 | en_HK |
dc.identifier.scopusauthorid | Chu, RL=25925722300 | en_HK |
dc.identifier.scopusauthorid | Jain, JK=7102269763 | en_HK |
dc.identifier.scopusauthorid | Shen, SQ=7403431266 | en_HK |
dc.identifier.issnl | 0031-9007 | - |