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Article: Electrochemical stability of orthopedic porous NiTi shape memory alloys treated by different surface modification techniques

TitleElectrochemical stability of orthopedic porous NiTi shape memory alloys treated by different surface modification techniques
Authors
Issue Date2009
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2009, v. 156 n. 6, p. C187-C194 How to Cite?
AbstractThe complex surface morphology and large exposed surface area induce electrochemical instability on porous NiTi shape memory alloys in human body fluids. Consequently, leaching of toxic nickel ions from the alloys impede wider applications of the materials in the biomedical fields, especially as bone implants. Electrochemical impedance spectroscopy (EIS) is a useful tool to evaluate the electrochemical stability of surface film in simulated body fluids (SBF) and to identify the most effective surface modification techniques for porous NiTi alloys. In the present work, EIS is employed to characterize porous NiTi alloys that have been modified by various processes in SBF at 37°C to evaluate the relationship between the surface film structure and electrochemical stability. Two different equivalent circuits involving a dual oxide film model with a porous outer layer and an inner barrier layer are proposed to model the experimental data acquired under open-circuit conditions for the control sample (dense NiTi) and porous NiTi alloys, respectively. The modeled results reveal that both chemical treatment and oxygen plasma immersion-ion implantation are effective surface modification techniques to form a protective film with higher electrochemical stability on the surface of porous NiTi alloys. © 2009 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/59472
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWu, Sen_HK
dc.contributor.authorLiu, Xen_HK
dc.contributor.authorHu, Ten_HK
dc.contributor.authorJiang, Jen_HK
dc.contributor.authorChu, PKen_HK
dc.contributor.authorYeung, KWKen_HK
dc.contributor.authorChung, CYen_HK
dc.contributor.authorChu, CLen_HK
dc.contributor.authorXu, Zen_HK
dc.contributor.authorLu, WWen_HK
dc.contributor.authorCheung, KMCen_HK
dc.contributor.authorLuk, KDKen_HK
dc.date.accessioned2010-05-31T03:50:54Z-
dc.date.available2010-05-31T03:50:54Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2009, v. 156 n. 6, p. C187-C194en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59472-
dc.description.abstractThe complex surface morphology and large exposed surface area induce electrochemical instability on porous NiTi shape memory alloys in human body fluids. Consequently, leaching of toxic nickel ions from the alloys impede wider applications of the materials in the biomedical fields, especially as bone implants. Electrochemical impedance spectroscopy (EIS) is a useful tool to evaluate the electrochemical stability of surface film in simulated body fluids (SBF) and to identify the most effective surface modification techniques for porous NiTi alloys. In the present work, EIS is employed to characterize porous NiTi alloys that have been modified by various processes in SBF at 37°C to evaluate the relationship between the surface film structure and electrochemical stability. Two different equivalent circuits involving a dual oxide film model with a porous outer layer and an inner barrier layer are proposed to model the experimental data acquired under open-circuit conditions for the control sample (dense NiTi) and porous NiTi alloys, respectively. The modeled results reveal that both chemical treatment and oxygen plasma immersion-ion implantation are effective surface modification techniques to form a protective film with higher electrochemical stability on the surface of porous NiTi alloys. © 2009 The Electrochemical Society.en_HK
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.rightsJournal of Electrochemical Society. Copyright © Electrochemical Society, Inc.en_HK
dc.titleElectrochemical stability of orthopedic porous NiTi shape memory alloys treated by different surface modification techniquesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0013-4651&volume=156&issue=6&spage=C187&epage=194&date=2009&atitle=Electrochemical+stability+of+orthopedic+porous+NiTi+shape+memory+alloys+treated+by+different+surface+modification+techniquesen_HK
dc.identifier.emailYeung, KWK:wkkyeung@hkucc.hku.hken_HK
dc.identifier.emailLu, WW:wwlu@hku.hken_HK
dc.identifier.emailCheung, KMC:cheungmc@hku.hken_HK
dc.identifier.emailLuk, KDK:hcm21000@hku.hken_HK
dc.identifier.authorityYeung, KWK=rp00309en_HK
dc.identifier.authorityLu, WW=rp00411en_HK
dc.identifier.authorityCheung, KMC=rp00387en_HK
dc.identifier.authorityLuk, KDK=rp00333en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.3110945en_HK
dc.identifier.scopuseid_2-s2.0-65449126984en_HK
dc.identifier.hkuros166723en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65449126984&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume156en_HK
dc.identifier.issue6en_HK
dc.identifier.spageC187en_HK
dc.identifier.epageC194en_HK
dc.identifier.isiWOS:000265737600029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWu, S=15125218800en_HK
dc.identifier.scopusauthoridLiu, X=8408205200en_HK
dc.identifier.scopusauthoridHu, T=25948400300en_HK
dc.identifier.scopusauthoridJiang, J=7401861084en_HK
dc.identifier.scopusauthoridChu, PK=36040705700en_HK
dc.identifier.scopusauthoridYeung, KWK=13309584700en_HK
dc.identifier.scopusauthoridChung, CY=8100842800en_HK
dc.identifier.scopusauthoridChu, CL=7404345713en_HK
dc.identifier.scopusauthoridXu, Z=7405427789en_HK
dc.identifier.scopusauthoridLu, WW=7404215221en_HK
dc.identifier.scopusauthoridCheung, KMC=7402406754en_HK
dc.identifier.scopusauthoridLuk, KDK=7201921573en_HK

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