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Article: Simulation of surface effects on the intrinsic dissipation of nanooscillators

TitleSimulation of surface effects on the intrinsic dissipation of nanooscillators
Authors
KeywordsMolecular dynamics
Nanocantilever
Nanostructures
Surface area to volume ratio
Surface effects
Issue Date2009
PublisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.asp
Citation
Philosophical Magazine Letters, 2009, v. 89 n. 1, p. 51-58 How to Cite?
AbstractThe rapid increase of surface area-volume ratio (SVR) with shrinking structure size has a great impact on surface-related intrinsic dissipation, which usually leads to low quality factors for the devices composed of nanoelectromechanical systems. In the present study, the flexural oscillations of nanocantilevers with varying thicknesses and lengths were simulated using the molecular dynamics method, in which the surface effects on the energy dissipation was evaluated when SVR was increased to extremely large values (between 0.4 and 2.0 nm-1). And, it is also interesting to note that the prediction of the size-dependent Young's modulus by means of resonant frequency of the underdamped oscillation showed good agreement with previous findings.
Persistent Identifierhttp://hdl.handle.net/10722/59041
ISSN
2015 Impact Factor: 0.918
2015 SCImago Journal Rankings: 0.770
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants Council of the Hong Kong Special Administrative Region, ChinaHKU 716007E
Funding Information:

Support from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project no. HKU 716007E) is acknowledged. The authors wish to thank Dr G. P. Zheng for his helpful advice and discussions.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorYan, Ken_HK
dc.contributor.authorSoh, AKen_HK
dc.date.accessioned2010-05-31T03:41:53Z-
dc.date.available2010-05-31T03:41:53Z-
dc.date.issued2009en_HK
dc.identifier.citationPhilosophical Magazine Letters, 2009, v. 89 n. 1, p. 51-58en_HK
dc.identifier.issn0950-0839en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59041-
dc.description.abstractThe rapid increase of surface area-volume ratio (SVR) with shrinking structure size has a great impact on surface-related intrinsic dissipation, which usually leads to low quality factors for the devices composed of nanoelectromechanical systems. In the present study, the flexural oscillations of nanocantilevers with varying thicknesses and lengths were simulated using the molecular dynamics method, in which the surface effects on the energy dissipation was evaluated when SVR was increased to extremely large values (between 0.4 and 2.0 nm-1). And, it is also interesting to note that the prediction of the size-dependent Young's modulus by means of resonant frequency of the underdamped oscillation showed good agreement with previous findings.en_HK
dc.languageengen_HK
dc.publisherTaylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/09500839.aspen_HK
dc.relation.ispartofPhilosophical Magazine Lettersen_HK
dc.subjectMolecular dynamicsen_HK
dc.subjectNanocantileveren_HK
dc.subjectNanostructuresen_HK
dc.subjectSurface area to volume ratioen_HK
dc.subjectSurface effectsen_HK
dc.titleSimulation of surface effects on the intrinsic dissipation of nanooscillatorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0950-0839&volume=89&spage=51&epage=58&date=2009&atitle=Simulation+of+surface+effects+on+the+intrinsic+dissipation+of+nanooscillatorsen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1080/09500830802558532en_HK
dc.identifier.scopuseid_2-s2.0-61549126005en_HK
dc.identifier.hkuros156692en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-61549126005&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue1en_HK
dc.identifier.spage51en_HK
dc.identifier.epage58en_HK
dc.identifier.isiWOS:000262720800007-
dc.publisher.placeUnited Kingdomen_HK
dc.relation.projectDevelopment and application of a novel mesoscopic theory for the study of semiconducting ferroelectrics with crystal defects-
dc.identifier.scopusauthoridYan, K=7102869239en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.citeulike3991603-

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