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Article: Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator

TitleImproved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator
Authors
Issue Date2008
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 2008, v. 48 n. 11-12, p. 1780-1785 How to Cite?
AbstractHafnium dioxide deposited by RF sputtering is used as the gate insulator of metal-insulator-silicon-carbide (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that for the same insulator thickness, the HfO2 sensor is more sensitive than its SiO2 counterpart. This should be mainly attributed to the larger barrier-height at the Pt/HfO2 interface which can reduce the current of the sensor before hydrogen exposure. Moreover, the sensitivity initially increases with the thickness of the HfO2 film because a thicker oxide layer can provide a larger barrier-height reduction upon hydrogen exposure. However, further increasing the thickness of the HfO2 dielectric beyond about 3.3 nm reduces the sensitivity, possibly due to more trapped charges in thicker high-k dielectric which can screen the effect of the polarized hydrogen layer. © 2008 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/58783
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
Funding AgencyGrant Number
University of Hong Kong00600009
Funding Information:

We would like to acknowledge the University Development Fund (Nanotechnology Research Institute, 00600009) of the University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-05-31T03:36:50Z-
dc.date.available2010-05-31T03:36:50Z-
dc.date.issued2008en_HK
dc.identifier.citationMicroelectronics Reliability, 2008, v. 48 n. 11-12, p. 1780-1785en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58783-
dc.description.abstractHafnium dioxide deposited by RF sputtering is used as the gate insulator of metal-insulator-silicon-carbide (MISiC) Schottky-diode hydrogen sensors. Sensors with different gate insulator thicknesses are fabricated for investigation. Their hydrogen-sensing properties are compared with each other by taking measurements at various temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that for the same insulator thickness, the HfO2 sensor is more sensitive than its SiO2 counterpart. This should be mainly attributed to the larger barrier-height at the Pt/HfO2 interface which can reduce the current of the sensor before hydrogen exposure. Moreover, the sensitivity initially increases with the thickness of the HfO2 film because a thicker oxide layer can provide a larger barrier-height reduction upon hydrogen exposure. However, further increasing the thickness of the HfO2 dielectric beyond about 3.3 nm reduces the sensitivity, possibly due to more trapped charges in thicker high-k dielectric which can screen the effect of the polarized hydrogen layer. © 2008 Elsevier Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleImproved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0026-2714&volume=48&spage=1780&epage=1785&date=2008&atitle=Improved+Sensing+Characteristics+of+MISiC+Schottky-Diode+Hydrogen+Sensor+by+using+HfO2+as+Gate+Insulatoren_HK
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2008.09.006en_HK
dc.identifier.scopuseid_2-s2.0-55649087754en_HK
dc.identifier.hkuros164243en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-55649087754&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue11-12en_HK
dc.identifier.spage1780en_HK
dc.identifier.epage1785en_HK
dc.identifier.isiWOS:000261626000006-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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