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Article: Enhancement of tunneling magnetoresistance by optimization of capping layer thicknesses in CoFeB/MgO/CoFeB magnetic tunnel junctions

TitleEnhancement of tunneling magnetoresistance by optimization of capping layer thicknesses in CoFeB/MgO/CoFeB magnetic tunnel junctions
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 105 n. 7 How to Cite?
AbstractThe main focus of improving the tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) has been on optimizing the structure and thickness of the MgO barrier layer [Moriyama, Appl. Phys. Lett. 88, 222503 (2006); Yuasa, Nat. Mater. 3, 868 (2004)]. However, in this paper, we found that the thicknesses of the capping layers also play an important role in TMR. We studied the influence of the capping layers above the CoFeB/MgO/CoFeB. It was intuitively believed that these capping layers did not affect the TMR because they were deposited after the critical CoFeB/MgO/CoFeB structure. Surprisingly, we found that the thicknesses of the capping Ta and Ru layers have significant influence on the TMR. The stress or strain applied onto the MgO barrier by these capping layers appear to be responsible. The results in this paper shed light on optimizing TMR of MgO MTJs. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58764
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorPong, PWTen_HK
dc.contributor.authorEgelhoff, WFen_HK
dc.date.accessioned2010-05-31T03:36:30Z-
dc.date.available2010-05-31T03:36:30Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 105 n. 7en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58764-
dc.description.abstractThe main focus of improving the tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) has been on optimizing the structure and thickness of the MgO barrier layer [Moriyama, Appl. Phys. Lett. 88, 222503 (2006); Yuasa, Nat. Mater. 3, 868 (2004)]. However, in this paper, we found that the thicknesses of the capping layers also play an important role in TMR. We studied the influence of the capping layers above the CoFeB/MgO/CoFeB. It was intuitively believed that these capping layers did not affect the TMR because they were deposited after the critical CoFeB/MgO/CoFeB structure. Surprisingly, we found that the thicknesses of the capping Ta and Ru layers have significant influence on the TMR. The stress or strain applied onto the MgO barrier by these capping layers appear to be responsible. The results in this paper shed light on optimizing TMR of MgO MTJs. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.titleEnhancement of tunneling magnetoresistance by optimization of capping layer thicknesses in CoFeB/MgO/CoFeB magnetic tunnel junctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=105&spage=07C915&epage=&date=2009&atitle=Enhancement+of+Tunneling+Magnetoresistance+by+Optimization+of+Capping+Layer+Thicknesses+in+CoFeB/MgO/CoFeB+Magnetic+Tunnel+Junctionsen_HK
dc.identifier.emailPong, PWT:ppong@eee.hku.hken_HK
dc.identifier.authorityPong, PWT=rp00217en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3063664en_HK
dc.identifier.scopuseid_2-s2.0-65249099764en_HK
dc.identifier.hkuros158646en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65249099764&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume105en_HK
dc.identifier.issue7en_HK
dc.identifier.isiWOS:000266633500475-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridPong, PWT=24071267900en_HK
dc.identifier.scopusauthoridEgelhoff, WF=7006151986en_HK
dc.identifier.citeulike10451941-

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