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Article: Growth of ZnSe Nanospirals with Bending Mediated by Lomer-Cottrell Sessile Dislocations through Varying Pressure

TitleGrowth of ZnSe Nanospirals with Bending Mediated by Lomer-Cottrell Sessile Dislocations through Varying Pressure
Authors
Issue Date2008
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/crystal
Citation
Crystal Growth And Design, 2008, v. 8 n. 10, p. 3829-3833 How to Cite?
Abstract
ZnSe nanospirals, with zinc blende structured building blocks exhibiting unconventional mosaic configuration, were successfully fabricated via a two-stage growth process, in which abrupt variation of reaction pressure was introduced. In-plane bending, with remarkable morphological difference from the commonly reported nanorings or nanohelixes induced by spontaneous polarization in II-VI semiconductors, has been observed, which can be mainly attributed to existence of numerous Lomer-Cottrell sessile dislocations with edge components. Investigations on morphological evolutions by applying different reaction pressure and growth time in the second stage imply that the formation of nanospirals is closely related to the pressure variation. The results may provide useful information for further understanding the strain release mechanism and mechanical response of ZnSe at the nanoscale. © 2008 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/58740
ISSN
2013 Impact Factor: 4.558
ISI Accession Number ID
Funding AgencyGrant Number
Natural Science Foundation for the Outstanding Young Scientists of Hubei Province, China2005ABB014
Program for New Century Excellent Talents in University (NCET)
University Development Fund (UDF)
University of Hong Kong
Funding Information:

This work was supported by the Natural Science Foundation for the Outstanding Young Scientists of Hubei Province, China (Grant No. 2005ABB014) and the Program for New Century Excellent Talents in University (NCET). W.C.H. Choy acknowledges the support by the University Development Fund (UDF) and the seed funding of the University of Hong Kong. Yee P. Leung is acknowledged for his technical assistant and useful discussions.

References

 

DC FieldValueLanguage
dc.contributor.authorJin, Len_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorChoy, WCHen_HK
dc.date.accessioned2010-05-31T03:36:04Z-
dc.date.available2010-05-31T03:36:04Z-
dc.date.issued2008en_HK
dc.identifier.citationCrystal Growth And Design, 2008, v. 8 n. 10, p. 3829-3833en_HK
dc.identifier.issn1528-7483en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58740-
dc.description.abstractZnSe nanospirals, with zinc blende structured building blocks exhibiting unconventional mosaic configuration, were successfully fabricated via a two-stage growth process, in which abrupt variation of reaction pressure was introduced. In-plane bending, with remarkable morphological difference from the commonly reported nanorings or nanohelixes induced by spontaneous polarization in II-VI semiconductors, has been observed, which can be mainly attributed to existence of numerous Lomer-Cottrell sessile dislocations with edge components. Investigations on morphological evolutions by applying different reaction pressure and growth time in the second stage imply that the formation of nanospirals is closely related to the pressure variation. The results may provide useful information for further understanding the strain release mechanism and mechanical response of ZnSe at the nanoscale. © 2008 American Chemical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/crystalen_HK
dc.relation.ispartofCrystal Growth and Designen_HK
dc.titleGrowth of ZnSe Nanospirals with Bending Mediated by Lomer-Cottrell Sessile Dislocations through Varying Pressureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1528-7483&volume=8&issue=10&spage=3829&epage=3833&date=2008&atitle=Growth+of+ZnSe+Nanospirals+with+Bending+Mediated+by+Lomer-Cottrell+Sessile+Dislocations+through+Varying+Pressure-
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/cg8005376en_HK
dc.identifier.scopuseid_2-s2.0-61549114327en_HK
dc.identifier.hkuros161970en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-61549114327&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume8en_HK
dc.identifier.issue10en_HK
dc.identifier.spage3829en_HK
dc.identifier.epage3833en_HK
dc.identifier.isiWOS:000259672900059-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJin, L=54395590000en_HK
dc.identifier.scopusauthoridWang, J=35241174000en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK

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