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Conference Paper: A novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls
Title | A novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls |
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Authors | |
Issue Date | 2009 |
Publisher | Wiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html |
Citation | The International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, 6-10 October 2008. In Physica Status Solidi. C, 2009, v. 6 suppl. 2, p. S639-S642 How to Cite? |
Abstract | We demonstrate a novel design of photonic bandgap structure on GaN created using a self-assembly approach. Microsphere lithography was employed to generate a hexagonal-close-packed monolayer, which serves as an etch mask in the fabrication of the sidewalls-inclined nanopillars. To produce a photonic bandgap in this photonic crystal structure, an inclined sidewall was introduced, instead of the conventional nanopillar structures with vertical sidewalls obtained from microsphere lithography. The structure was designed with plane-wave-expansion simulations and the results verified by optical transmission, whereby a pronounced transmission dip centered at 510 nm was observed. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Description | This journal suppl. entitled: Supplement: International Workshop on Nitride Semiconductors (IWN 2008) |
Persistent Identifier | http://hdl.handle.net/10722/58729 |
ISSN | 2020 SCImago Journal Rankings: 0.210 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Fu, WY | en_HK |
dc.contributor.author | Wong, KKY | en_HK |
dc.contributor.author | Choi, HW | en_HK |
dc.date.accessioned | 2010-05-31T03:35:53Z | - |
dc.date.available | 2010-05-31T03:35:53Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | The International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, 6-10 October 2008. In Physica Status Solidi. C, 2009, v. 6 suppl. 2, p. S639-S642 | en_HK |
dc.identifier.issn | 1862-6351 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/58729 | - |
dc.description | This journal suppl. entitled: Supplement: International Workshop on Nitride Semiconductors (IWN 2008) | - |
dc.description.abstract | We demonstrate a novel design of photonic bandgap structure on GaN created using a self-assembly approach. Microsphere lithography was employed to generate a hexagonal-close-packed monolayer, which serves as an etch mask in the fabrication of the sidewalls-inclined nanopillars. To produce a photonic bandgap in this photonic crystal structure, an inclined sidewall was introduced, instead of the conventional nanopillar structures with vertical sidewalls obtained from microsphere lithography. The structure was designed with plane-wave-expansion simulations and the results verified by optical transmission, whereby a pronounced transmission dip centered at 510 nm was observed. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Wiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html | en_HK |
dc.relation.ispartof | Physica Status Solidi. C: Current Topics in Solid State Physics | en_HK |
dc.title | A novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Wong, KKY: kywong04@hkucc.hku.hk | en_HK |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | en_HK |
dc.identifier.authority | Wong, KKY=rp00189 | en_HK |
dc.identifier.authority | Choi, HW=rp00108 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/pssc.200880827 | en_HK |
dc.identifier.scopus | eid_2-s2.0-79251619298 | en_HK |
dc.identifier.hkuros | 164109 | en_HK |
dc.identifier.hkuros | 164114 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79251619298&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 6 | en_HK |
dc.identifier.issue | suppl. 2 | en_HK |
dc.identifier.spage | S639 | en_HK |
dc.identifier.epage | S642 | en_HK |
dc.identifier.isi | WOS:000294494400088 | - |
dc.publisher.place | Germany | en_HK |
dc.identifier.scopusauthorid | Choi, HW=7404334877 | en_HK |
dc.identifier.scopusauthorid | Wong, KKY=36456599700 | en_HK |
dc.identifier.scopusauthorid | Fu, WY=24481323900 | en_HK |
dc.customcontrol.immutable | sml 140723 | - |
dc.identifier.issnl | 1610-1634 | - |