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Article: Nanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices

TitleNanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices
Authors
Zheng, TChoy, WCHSun, Y
KeywordsPhysics engineering
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 12, article no. 123303 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3099038
AbstractWe report a hybrid nanoparticle/organic device with strong resonant tunneling behavior by introducing ligand-capped Ag nanoparticles between indium tin oxide and hole transport layer in small molecule organic light-emitting devices. The dependences of resonant tunneling current on the thickness of the organic layers are investigated. For the optimized device, a peak-to-valley current ratio as high as 4.5 and narrow peak width about 1.8 V are obtained. Combining with the analysis of current-voltage behavior, the mechanism based on the charge trapping effect of Ag nanoparticles is proposed to interpret the operation of the hybrid device. Finally, the emission characteristics of hybrid devices are also studied. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58721
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000264633500066
Funding AgencyGrant Number
Council of the HK Special Administrative Region, China14300.324.01
Funding Information:

This work is supported by Grant No. 14300.324.01 from the Research Grant Council of the HK Special Administrative Region, China. We would like to thank Professor P. T. Lai for his technical assistance in the C-V measurement.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZheng, Ten_HK
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorSun, Yen_HK
dc.date.accessioned2010-05-31T03:35:44Z-
dc.date.available2010-05-31T03:35:44Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 12, article no. 123303-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58721-
dc.description.abstractWe report a hybrid nanoparticle/organic device with strong resonant tunneling behavior by introducing ligand-capped Ag nanoparticles between indium tin oxide and hole transport layer in small molecule organic light-emitting devices. The dependences of resonant tunneling current on the thickness of the organic layers are investigated. For the optimized device, a peak-to-valley current ratio as high as 4.5 and narrow peak width about 1.8 V are obtained. Combining with the analysis of current-voltage behavior, the mechanism based on the charge trapping effect of Ag nanoparticles is proposed to interpret the operation of the hybrid device. Finally, the emission characteristics of hybrid devices are also studied. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 94 n. 12, article no. 123303 and may be found at https://doi.org/10.1063/1.3099038-
dc.subjectPhysics engineering-
dc.titleNanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&issue=12 article no. 123303&spage=&epage=&date=2009&atitle=Nanoparticle-induced+resonant+tunneling+behaviors+in+small+molecule+organic+light-emitting+devices-
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3099038en_HK
dc.identifier.scopuseid_2-s2.0-63549092861en_HK
dc.identifier.hkuros161973en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63549092861&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue12en_HK
dc.identifier.spagearticle no. 123303-
dc.identifier.epagearticle no. 123303-
dc.identifier.isiWOS:000264633500066-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZheng, T=26427890900en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridSun, Y=8527705700en_HK
dc.identifier.issnl0003-6951-

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