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Article: Near infrared emission in rubrene:fullerene heterojunction devices

TitleNear infrared emission in rubrene:fullerene heterojunction devices
Authors
Issue Date2009
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett
Citation
Chemical Physics Letters, 2009, v. 474 n. 1-3, p. 141-145 How to Cite?
AbstractNear infrared (NIR) emission was studied in rubrene:fullerene planar and bulk heterojunction bifunctional devices. The degree of mixing was controlled by changing the substrate temperature for planar heterojunctions and changing the ratio of the two materials for bulk heterojunctions. We found that there was no simple correlation between the presence of the NIR emission and the photovoltaic efficiency and the turn-on voltage of the devices. The origin of the NIR emission and the relationship between EL spectra, photovoltaic efficiency, and the degree of mixing of the donor and acceptor materials is discussed. © 2009 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/58474
ISSN
2015 Impact Factor: 1.86
2015 SCImago Journal Rankings: 0.757
ISI Accession Number ID
Funding AgencyGrant Number
Hong Kong Special Administrative Region, China7021/03P
7010/05P
Strategic Research Theme
University Development Fund
Seed Funding
Natural Sciences and Engineering Research Council of Canada (NSERC)
Funding Information:

Work at HKU was supported by the Research Grants Council of The Hong Kong Special Administrative Region, China (Project Numbers HKU 7021/03P and 7010/05P). Financial support from the Strategic Research Theme, University Development Fund, and Seed Funding Grant (administrated by The University of Hong Kong) and Outstanding Young Researcher Award are also acknowledged. Work at Queen's was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC).

References

 

DC FieldValueLanguage
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorNunzi, JMen_HK
dc.date.accessioned2010-05-31T03:30:56Z-
dc.date.available2010-05-31T03:30:56Z-
dc.date.issued2009en_HK
dc.identifier.citationChemical Physics Letters, 2009, v. 474 n. 1-3, p. 141-145en_HK
dc.identifier.issn0009-2614en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58474-
dc.description.abstractNear infrared (NIR) emission was studied in rubrene:fullerene planar and bulk heterojunction bifunctional devices. The degree of mixing was controlled by changing the substrate temperature for planar heterojunctions and changing the ratio of the two materials for bulk heterojunctions. We found that there was no simple correlation between the presence of the NIR emission and the photovoltaic efficiency and the turn-on voltage of the devices. The origin of the NIR emission and the relationship between EL spectra, photovoltaic efficiency, and the degree of mixing of the donor and acceptor materials is discussed. © 2009 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cpletten_HK
dc.relation.ispartofChemical Physics Lettersen_HK
dc.rightsChemical Physics Letters. Copyright © Elsevier BV.en_HK
dc.titleNear infrared emission in rubrene:fullerene heterojunction devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0009-2614&volume=474&spage=141&epage=145&date=2009&atitle=Near+infrared+emission+in+rubrene:+fullerene+heterojunction+devicesen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.cplett.2009.04.024en_HK
dc.identifier.scopuseid_2-s2.0-65549122477en_HK
dc.identifier.hkuros155954en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65549122477&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume474en_HK
dc.identifier.issue1-3en_HK
dc.identifier.spage141en_HK
dc.identifier.epage145en_HK
dc.identifier.isiWOS:000266115800030-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridNunzi, JM=7005235497en_HK

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