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Article: Effect of annealing on the performance of CrO3/ZnO light emitting diodes

TitleEffect of annealing on the performance of CrO3/ZnO light emitting diodes
Authors
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 20 How to Cite?
Abstract
Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58443
ISSN
2013 Impact Factor: 3.515
ISI Accession Number ID
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding
Outstanding Young Researcher Award
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.

References
Grants

 

Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University
DC FieldValueLanguage
dc.contributor.authorXi, YYen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorHuang, BQen_HK
dc.contributor.authorGe, Len_HK
dc.contributor.authorChen, XYen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.date.accessioned2010-05-31T03:30:23Z-
dc.date.available2010-05-31T03:30:23Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 20en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58443-
dc.description.abstractHeterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleEffect of annealing on the performance of CrO3/ZnO light emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&spage=203502: 1&epage=3&date=2009&atitle=Effect+of+annealing+on+the+performance+of+CrO3/ZnO+light+emitting+diodesen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3140962en_HK
dc.identifier.scopuseid_2-s2.0-65949087011en_HK
dc.identifier.hkuros155955en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65949087011&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue20en_HK
dc.identifier.isiWOS:000266342800072-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridHuang, BQ=35240301800en_HK
dc.identifier.scopusauthoridGe, L=35210422900en_HK
dc.identifier.scopusauthoridChen, XY=22933917300en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK

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