Article: Effect of annealing on the performance of CrO3/ZnO light emitting diodes
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- Publisher Website: 10.1063/1.3140962
- Scopus: eid_2-s2.0-65949087011
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| Title | Effect of annealing on the performance of CrO3/ZnO light emitting diodes | ||||||||||||||
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| Authors | Xi, YY1 Ng, AMC1 Hsu, YF1 Djurišić, AB1 Huang, BQ1 Ge, L1 Chen, XY1 Chan, WK1 Tam, HL2 Cheah, KW2 | ||||||||||||||
| Issue Date | 2009 | ||||||||||||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||||||||||
| Citation | Applied Physics Letters, 2009, v. 94 n. 20 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3140962 | ||||||||||||||
| Abstract | Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics. | ||||||||||||||
| ISSN | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||||||||||
| DOI | http://dx.doi.org/10.1063/1.3140962 | ||||||||||||||
| ISI Accession Number ID | WOS:000266342800072
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements. | ||||||||||||||
| References | References in Scopus | ||||||||||||||
| Grants | Light Emitting Diodes Fabricated by Electrochemical Methods |
| dc.contributor.author | Xi, YY | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| dc.contributor.author | Ng, AMC | ||||||||||||||
| dc.contributor.author | Hsu, YF | ||||||||||||||
| dc.contributor.author | Djurišić, AB | ||||||||||||||
| dc.contributor.author | Huang, BQ | ||||||||||||||
| dc.contributor.author | Ge, L | ||||||||||||||
| dc.contributor.author | Chen, XY | ||||||||||||||
| dc.contributor.author | Chan, WK | ||||||||||||||
| dc.contributor.author | Tam, HL | ||||||||||||||
| dc.contributor.author | Cheah, KW | ||||||||||||||
| dc.date.accessioned | 2010-05-31T03:30:23Z | ||||||||||||||
| dc.date.available | 2010-05-31T03:30:23Z | ||||||||||||||
| dc.date.issued | 2009 | ||||||||||||||
| dc.description.abstract | Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics. | ||||||||||||||
| dc.description.grant | Light Emitting Diodes Fabricated by Electrochemical Methods | ||||||||||||||
| dc.description.grantcode | 100446 | ||||||||||||||
| dc.description.nature | published_or_final_version | ||||||||||||||
| dc.identifier.citation | Applied Physics Letters, 2009, v. 94 n. 20 [How to Cite?] DOI: http://dx.doi.org/10.1063/1.3140962 | ||||||||||||||
| dc.identifier.doi | http://dx.doi.org/10.1063/1.3140962 | ||||||||||||||
| dc.identifier.hkuros | 155955 | ||||||||||||||
| dc.identifier.isi | WOS:000266342800072
Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements. | ||||||||||||||
| dc.identifier.issn | 0003-6951 2011 Impact Factor: 3.844 2011 SCImago Journal Rankings: 0.398 | ||||||||||||||
| dc.identifier.issue | 20 | ||||||||||||||
| dc.identifier.openurl | | ||||||||||||||
| dc.identifier.scopus | eid_2-s2.0-65949087011 | ||||||||||||||
| dc.identifier.uri | http://hdl.handle.net/10722/58443 | ||||||||||||||
| dc.identifier.volume | 94 | ||||||||||||||
| dc.language | eng | ||||||||||||||
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||||||||||
| dc.publisher.place | United States | ||||||||||||||
| dc.relation.ispartof | Applied Physics Letters | ||||||||||||||
| dc.relation.references | References in Scopus | ||||||||||||||
| dc.rights | Applied Physics Letters. Copyright © American Institute of Physics. | ||||||||||||||
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License | ||||||||||||||
| dc.title | Effect of annealing on the performance of CrO3/ZnO light emitting diodes | ||||||||||||||
| dc.type | Article |
Author Affiliations
- The University of Hong Kong
- Hong Kong Baptist University