File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Article: Effect of annealing on the performance of CrO3/ZnO light emitting diodes
  • Basic View
  • Metadata View
  • XML View
TitleEffect of annealing on the performance of CrO3/ZnO light emitting diodes
 
AuthorsXi, YY1
Ng, AMC1
Hsu, YF1
Djurišić, AB1
Huang, BQ1
Ge, L1
Chen, XY1
Chan, WK1
Tam, HL2
Cheah, KW2
 
Issue Date2009
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2009, v. 94 n. 20 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3140962
 
AbstractHeterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.3140962
 
ISI Accession Number IDWOS:000266342800072
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding
Outstanding Young Researcher Award
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.

 
ReferencesReferences in Scopus
 
GrantsLight Emitting Diodes Fabricated by Electrochemical Methods
 
DC FieldValue
dc.contributor.authorXi, YY
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorHuang, BQ
 
dc.contributor.authorGe, L
 
dc.contributor.authorChen, XY
 
dc.contributor.authorChan, WK
 
dc.contributor.authorTam, HL
 
dc.contributor.authorCheah, KW
 
dc.date.accessioned2010-05-31T03:30:23Z
 
dc.date.available2010-05-31T03:30:23Z
 
dc.date.issued2009
 
dc.description.abstractHeterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. © 2009 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 20 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.3140962
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.3140962
 
dc.identifier.hkuros155955
 
dc.identifier.isiWOS:000266342800072
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding
Outstanding Young Researcher Award
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.

 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue20
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-65949087011
 
dc.identifier.urihttp://hdl.handle.net/10722/58443
 
dc.identifier.volume94
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.titleEffect of annealing on the performance of CrO3/ZnO light emitting diodes
 
dc.typeArticle
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Xi, YY</contributor.author>
<contributor.author>Ng, AMC</contributor.author>
<contributor.author>Hsu, YF</contributor.author>
<contributor.author>Djuri&#353;i&#263;, AB</contributor.author>
<contributor.author>Huang, BQ</contributor.author>
<contributor.author>Ge, L</contributor.author>
<contributor.author>Chen, XY</contributor.author>
<contributor.author>Chan, WK</contributor.author>
<contributor.author>Tam, HL</contributor.author>
<contributor.author>Cheah, KW</contributor.author>
<date.accessioned>2010-05-31T03:30:23Z</date.accessioned>
<date.available>2010-05-31T03:30:23Z</date.available>
<date.issued>2009</date.issued>
<identifier.citation>Applied Physics Letters, 2009, v. 94 n. 20</identifier.citation>
<identifier.issn>0003-6951</identifier.issn>
<identifier.uri>http://hdl.handle.net/10722/58443</identifier.uri>
<description.abstract>Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed. &#169; 2009 American Institute of Physics.</description.abstract>
<language>eng</language>
<publisher>American Institute of Physics. The Journal&apos;s web site is located at http://apl.aip.org/</publisher>
<relation.ispartof>Applied Physics Letters</relation.ispartof>
<rights>Applied Physics Letters. Copyright &#169; American Institute of Physics.</rights>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<title>Effect of annealing on the performance of CrO3/ZnO light emitting diodes</title>
<type>Article</type>
<identifier.openurl>http://library.hku.hk:4550/resserv?sid=HKU:IR&amp;issn=0003-6951&amp;volume=94&amp;spage=203502: 1&amp;epage=3&amp;date=2009&amp;atitle=Effect+of+annealing+on+the+performance+of+CrO3/ZnO+light+emitting+diodes</identifier.openurl>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1063/1.3140962</identifier.doi>
<identifier.scopus>eid_2-s2.0-65949087011</identifier.scopus>
<identifier.hkuros>155955</identifier.hkuros>
<relation.references>http://www.scopus.com/mlt/select.url?eid=2-s2.0-65949087011&amp;selection=ref&amp;src=s&amp;origin=recordpage</relation.references>
<identifier.volume>94</identifier.volume>
<identifier.issue>20</identifier.issue>
<identifier.isi>WOS:000266342800072</identifier.isi>
<publisher.place>United States</publisher.place>
<relation.project>Light Emitting Diodes Fabricated by Electrochemical Methods</relation.project>
<bitstream.url>http://hub.hku.hk/bitstream/10722/58443/1/content.pdf</bitstream.url>
</item>
Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University