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Article: Dynamic admittance of carbon nanotube-based molecular electronic devices and their equivalent electric circuit

TitleDynamic admittance of carbon nanotube-based molecular electronic devices and their equivalent electric circuit
Authors
KeywordsPhysics engineering
Electrical engineering
Electric lines
Electric network analysis
Molecular electronics
Issue Date2008
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2008, v. 19 n. 49, p. 495203 How to Cite?
AbstractWe use first-principles quantum mechanics to simulate the transient electrical response through carbon nanotube-based conductors under time-dependent bias voltages. The dynamic admittance and time-dependent charge distribution are reported and analyzed. We find that the electrical response of these two-terminal molecular devices can be mapped onto an equivalent classical electric circuit and that the switching time of these end-on carbon nanotube devices is only a few femtoseconds. This result is confirmed by studying the electric response of a simple two-site model device and is thus generalized to other two-terminal molecular electronic devices. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/58365
ISSN
2015 Impact Factor: 3.573
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID
Funding AgencyGrant Number
Intel Components Research (Portland, OR)
NSFCCF- 0524490
HKU teamHKU 7011/06P
N_HKU 764/05
HKUST 2/04C
Funding Information:

The authors thank Hong Guo, Jian Wang, and YiJing Yan for stimulating discussions. The Caltech team was supported partly by Intel Components Research (Portland, OR) and by NSF (CCF- 0524490). The HKU team was supported by the Hong Kong Research Grant Council (HKU 7011/06P, N_HKU 764/05, HKUST 2/04C).

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorYam, Cen_HK
dc.contributor.authorMo, Yen_HK
dc.contributor.authorWang, Fen_HK
dc.contributor.authorLi, Xen_HK
dc.contributor.authorChen, Gen_HK
dc.contributor.authorZheng, Xen_HK
dc.contributor.authorMatsuda, Yen_HK
dc.contributor.authorTahirKheli, Jen_HK
dc.contributor.authorGoddard III, WAen_HK
dc.date.accessioned2010-05-31T03:29:02Z-
dc.date.available2010-05-31T03:29:02Z-
dc.date.issued2008en_HK
dc.identifier.citationNanotechnology, 2008, v. 19 n. 49, p. 495203en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58365-
dc.description.abstractWe use first-principles quantum mechanics to simulate the transient electrical response through carbon nanotube-based conductors under time-dependent bias voltages. The dynamic admittance and time-dependent charge distribution are reported and analyzed. We find that the electrical response of these two-terminal molecular devices can be mapped onto an equivalent classical electric circuit and that the switching time of these end-on carbon nanotube devices is only a few femtoseconds. This result is confirmed by studying the electric response of a simple two-site model device and is thus generalized to other two-terminal molecular electronic devices. © IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.subjectPhysics engineering-
dc.subjectElectrical engineering-
dc.subjectElectric lines-
dc.subjectElectric network analysis-
dc.subjectMolecular electronics-
dc.titleDynamic admittance of carbon nanotube-based molecular electronic devices and their equivalent electric circuiten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=19&issue=49 article no. 495203&spage=&epage=&date=2008&atitle=Dynamic+admittance+of+carbon+nanotube-based+molecular+electronic+devices+and+their+equivalent+electric+circuiten_HK
dc.identifier.emailYam, C:yamcy@graduate.hku.hken_HK
dc.identifier.emailChen, G:ghc@yangtze.hku.hken_HK
dc.identifier.authorityYam, C=rp01399en_HK
dc.identifier.authorityChen, G=rp00671en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/19/49/495203en_HK
dc.identifier.scopuseid_2-s2.0-58149248051en_HK
dc.identifier.hkuros164771en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-58149248051&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue49en_HK
dc.identifier.spage495203-
dc.identifier.epage495203-
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000261043300005-
dc.publisher.placeUnited Kingdomen_HK
dc.relation.projectTheoretical investigation of carbon-nanotube-based nanoelectromechanical systems-
dc.relation.projectCarbon nanotube/AFI zeolite composite: superconductivity and Li storage application-
dc.relation.projectFirst-principles simulation of dynamic responses of molecular and nanoscopic devices-
dc.identifier.scopusauthoridYam, C=7004032400en_HK
dc.identifier.scopusauthoridMo, Y=35253750800en_HK
dc.identifier.scopusauthoridWang, F=35278563400en_HK
dc.identifier.scopusauthoridLi, X=12780536500en_HK
dc.identifier.scopusauthoridChen, G=35253368600en_HK
dc.identifier.scopusauthoridZheng, X=7404090981en_HK
dc.identifier.scopusauthoridMatsuda, Y=8914856400en_HK
dc.identifier.scopusauthoridTahirKheli, J=6507156032en_HK
dc.identifier.scopusauthoridGoddard III, WA=36042196400en_HK

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