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Article: A high-performance organic field-effect transistor based on platinum(II) porphyrin: Peripheral substituents on porphyrin ligand significantly affect film structure and charge mobility

TitleA high-performance organic field-effect transistor based on platinum(II) porphyrin: Peripheral substituents on porphyrin ligand significantly affect film structure and charge mobility
Authors
KeywordsMacrocyclic ligands
Materials science
Molecular electronics
OFET (organic field-effect transistor)
X-ray diffraction
Issue Date2008
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2451
Citation
Chemistry - An Asian Journal, 2008, v. 3 n. 7, p. 1092-1103 How to Cite?
AbstractOrganic field-effect transistors incorporating planar π-conjugated metal-free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H 2(OX)] (H 2OX= etioporphyrin-I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H 2TBP=tetra-(n- butyl)porphyrin) as determined by single crystal X-ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field-effect transistors (FETs) made from thin films of all these metal-free macrocycles and their metal derivatives show a p-type semiconductor behavior with a charge mobility (μ) ranging from 10 -6 to 10 -1 cm 2V -1 s -1. Annealing the as-deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10 -1 cm 2V -1 s -1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field-effect transistors made from thin films of metal-free macrocycles (except tetra-(n-propyl)porphycene) have significantly lower μ values (3.0×10 -6-3.7×10 -5 cm 2V -1 s -1). © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/58354
ISSN
2015 Impact Factor: 4.592
2015 SCImago Journal Rankings: 1.833
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChe, CMen_HK
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorChui, SSYen_HK
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorYan, JJen_HK
dc.contributor.authorFu, WFen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorWilliams, IDen_HK
dc.date.accessioned2010-05-31T03:28:50Z-
dc.date.available2010-05-31T03:28:50Z-
dc.date.issued2008en_HK
dc.identifier.citationChemistry - An Asian Journal, 2008, v. 3 n. 7, p. 1092-1103en_HK
dc.identifier.issn1861-4728en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58354-
dc.description.abstractOrganic field-effect transistors incorporating planar π-conjugated metal-free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H 2(OX)] (H 2OX= etioporphyrin-I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H 2TBP=tetra-(n- butyl)porphyrin) as determined by single crystal X-ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field-effect transistors (FETs) made from thin films of all these metal-free macrocycles and their metal derivatives show a p-type semiconductor behavior with a charge mobility (μ) ranging from 10 -6 to 10 -1 cm 2V -1 s -1. Annealing the as-deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10 -1 cm 2V -1 s -1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field-effect transistors made from thin films of metal-free macrocycles (except tetra-(n-propyl)porphycene) have significantly lower μ values (3.0×10 -6-3.7×10 -5 cm 2V -1 s -1). © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2451en_HK
dc.relation.ispartofChemistry - An Asian Journalen_HK
dc.subjectMacrocyclic ligandsen_HK
dc.subjectMaterials scienceen_HK
dc.subjectMolecular electronicsen_HK
dc.subjectOFET (organic field-effect transistor)en_HK
dc.subjectX-ray diffractionen_HK
dc.titleA high-performance organic field-effect transistor based on platinum(II) porphyrin: Peripheral substituents on porphyrin ligand significantly affect film structure and charge mobilityen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1861-4728&volume=3&issue=7&spage=1092&epage=1103&date=2008&atitle=A+high-performance+organic+field-effect+transistor+based+on+platinum+(II)+prophyrin:+peripheral+substituents+on+porphyrin+ligand+significantly+affect+film+structure+and+charge+mobility-
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.emailXiang, HF: hfxiang@eee.hku.hken_HK
dc.identifier.emailChui, SSY: chuissy@hkucc.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChui, SSY=rp00686en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/asia.200800011en_HK
dc.identifier.pmid18528916-
dc.identifier.scopuseid_2-s2.0-54549100224en_HK
dc.identifier.hkuros164200en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-54549100224&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1092en_HK
dc.identifier.epage1103en_HK
dc.identifier.isiWOS:000257621100002-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridChui, SSY=8297453100en_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridYan, JJ=35752634300en_HK
dc.identifier.scopusauthoridFu, WF=7202947315en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridWilliams, ID=7201818926en_HK

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