File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Field-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals

TitleField-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystals
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 93 n. 22 How to Cite?
AbstractWe fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1). © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58332
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
Funding AgencyGrant Number
NSFC/RGCN_ HKU 742/04
University Development Fund00600009
The University of Hong Kong
Innovation Technology Fund (ITF)
Strategic Theme on Organic Electronics
RGC of HKSAR7158/04E
200807176003
Funding Information:

This work was supported by the Joint Research Scheme NSFC/RGC (Grant No. N_ HKU 742/04), the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of The University of Hong Kong, the Innovation Technology Fund (ITF), the Strategic Theme on Organic Electronics, and RGC of HKSAR (Project Nos. HKU 7158/04E and HKU 200807176003). We acknowledge Clover & Sunic Systems Ltd. for their support with the fabrication system housed at The University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorChui, SSYen_HK
dc.contributor.authorChe, CMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-05-31T03:28:27Z-
dc.date.available2010-05-31T03:28:27Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 93 n. 22en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58332-
dc.description.abstractWe fabricated a field-effect transistor using micrometer-sized crystals (10-40 μm) of nickel(II) etioporphyrin-I NiOX as active material. Microwires and micrometer-sized crystals of NiOX were obtained by heating NiOX thin film under high vacuum. Through this method, traps due to solvent molecules could be avoided. The transistor fabricated with these micrometer-sized crystals has a hole mobility of 0.15±0.03 cm2 V-1s-1, which is two orders of magnitude higher than that obtained with the thin film structure (1.1× 10-3 cm2 V-1 s -1). © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.titleField-effect transistor fabricated with nickel(II) etioporphyrin-I micrometer-sized crystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=93&spage=223305&epage=1 to 223305&date=2008&atitle=Field-effect+Transistor+Fabricated+with+Nickel(II)+Etioporphyrin-I+Micrometer-sized+Crystals+en_HK
dc.identifier.emailXiang, HF: hfxiang@eee.hku.hken_HK
dc.identifier.emailChui, SSY: chuissy@hkucc.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChui, SSY=rp00686en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3040319en_HK
dc.identifier.scopuseid_2-s2.0-57349113069en_HK
dc.identifier.hkuros155975en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-57349113069&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue22en_HK
dc.identifier.isiWOS:000261430600076-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridChui, SSY=8297453100en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats