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Article: Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric

TitleCorrelation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric
Authors
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2008, v. 104 n. 11 How to Cite?
AbstractThe carrier mobility of pentacene thin-film transistor is studied by passivating the surface of its SiO2 gate dielectric in NH3 at different temperatures, namely, 900, 1000, 1100, and 1150 °C. Measurements demonstrate that the higher the annealing temperature, the higher the carrier mobility of the OTFT is. The device annealed at 1150 °C has a field-effect mobility of 0.74 cm2 /V s, which is 35% higher than that of the device annealed at 900 °C. Energy-dispersive x-ray analysis, scanning-electron microscopy, and atomic-force microscopy show that the higher carrier mobility should be due to more nitrogen incorporated at the gate-dielectric surface which results in more passivated dielectric surface and larger pentacene grains for carrier transport. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/58311
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 7133/07E
URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials
Funding Information:

This work was supported by the RGC of HKSAR, China (Project No. HKU 7133/07E) and the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials. The authors wish to thank Mr. C. L. Chan, Dr. B. L. Yang, and Ms. L. M. Lin for discussions on device fabrication.

References

 

DC FieldValueLanguage
dc.contributor.authorCheng, KHen_HK
dc.contributor.authorTang, WMen_HK
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-05-31T03:28:04Z-
dc.date.available2010-05-31T03:28:04Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal Of Applied Physics, 2008, v. 104 n. 11en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58311-
dc.description.abstractThe carrier mobility of pentacene thin-film transistor is studied by passivating the surface of its SiO2 gate dielectric in NH3 at different temperatures, namely, 900, 1000, 1100, and 1150 °C. Measurements demonstrate that the higher the annealing temperature, the higher the carrier mobility of the OTFT is. The device annealed at 1150 °C has a field-effect mobility of 0.74 cm2 /V s, which is 35% higher than that of the device annealed at 900 °C. Energy-dispersive x-ray analysis, scanning-electron microscopy, and atomic-force microscopy show that the higher carrier mobility should be due to more nitrogen incorporated at the gate-dielectric surface which results in more passivated dielectric surface and larger pentacene grains for carrier transport. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics . Copyright © American Institute of Physics.en_HK
dc.titleCorrelation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=104&spage=116107&epage=1 to 116107&date=2008&atitle=Correlation+Between+Carrier+Mobility+of+Pentacene+Thin-film+Transistor+and+Surface+Passivation+of+its+Gate+Dielectric+en_HK
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.3040004en_HK
dc.identifier.scopuseid_2-s2.0-58149242216en_HK
dc.identifier.hkuros155976en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-58149242216&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume104en_HK
dc.identifier.issue11en_HK
dc.identifier.isiWOS:000262364000175-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCheng, KH=7402997820en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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