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postgraduate thesis: A study on gate dielectrics for Ge MOS devices

TitleA study on gate dielectrics for Ge MOS devices
Authors
Advisors
Advisor(s):Lai, PT
Issue Date2010
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Li, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387
DegreeDoctor of Philosophy
SubjectDielectrics.
Metal oxide semiconductors, Complementary.
Germanium.
Dept/ProgramElectrical and Electronic Engineering

 

DC FieldValueLanguage
dc.contributor.advisorLai, PT-
dc.contributor.authorLi, Chunxia-
dc.contributor.author李春霞-
dc.date.issued2010-
dc.identifier.citationLi, C. [李春霞]. (2010). A study on gate dielectrics for Ge MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4370387-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B43703872-
dc.subject.lcshDielectrics.-
dc.subject.lcshMetal oxide semiconductors, Complementary.-
dc.subject.lcshGermanium.-
dc.titleA study on gate dielectrics for Ge MOS devices-
dc.typePG_Thesis-
dc.identifier.hkulb4370387-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4370387-
dc.date.hkucongregation2010-

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