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Article: Improved high-field reliability for a SiC metal-oxide-semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric

TitleImproved high-field reliability for a SiC metal-oxide-semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2007, v. 102 n. 5 How to Cite?
AbstractMaterials with high dielectric constant (k) have been used in SiC-based metal-oxide-semiconductor (MOS) devices to reduce the electric field in the gate dielectric and thus suppress a high-field reliability problem. In this work, high- k gate dielectrics Hfx Ti1-x O2 and Hfx Ti1-x ON are applied in SiC MOS devices and an ultrathin thermally grown SiO2 is used as an interlayer between SiC and the high- k materials to block electron injection from SiC into the low-barrier high- k materials. Incorporating nitrogen into the Hf-Ti oxide (by adding nitrogen gas during its sputtering) stacked with a SiO2 interlayer (Hfx Ti1-x O SiO2) results in a better gate dielectric for the MOS capacitor, such as smaller frequency dispersion in the capacitance-voltage curve, less oxide charges, and better interface quality. Moreover, the nitrogen incorporation increases the dielectric constant of the oxide, but causes higher dielectric leakage, which can be suppressed by the SiO2 interlayer. High-field stress under constant electric field is performed on the stacked/nonstacked Hf-Ti oxides and oxynitrides, and it turns out that the two oxynitrides show a much smaller flatband shift and a less stress-induced leakage current compared with the two oxides. Based on these results, the Hfx Ti1-x ON SiO2 stack could be a promising high- k gate dielectric for SiC MOS devices with enhanced reliability. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57461
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, LMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-04-12T01:37:19Z-
dc.date.available2010-04-12T01:37:19Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Applied Physics, 2007, v. 102 n. 5en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57461-
dc.description.abstractMaterials with high dielectric constant (k) have been used in SiC-based metal-oxide-semiconductor (MOS) devices to reduce the electric field in the gate dielectric and thus suppress a high-field reliability problem. In this work, high- k gate dielectrics Hfx Ti1-x O2 and Hfx Ti1-x ON are applied in SiC MOS devices and an ultrathin thermally grown SiO2 is used as an interlayer between SiC and the high- k materials to block electron injection from SiC into the low-barrier high- k materials. Incorporating nitrogen into the Hf-Ti oxide (by adding nitrogen gas during its sputtering) stacked with a SiO2 interlayer (Hfx Ti1-x O SiO2) results in a better gate dielectric for the MOS capacitor, such as smaller frequency dispersion in the capacitance-voltage curve, less oxide charges, and better interface quality. Moreover, the nitrogen incorporation increases the dielectric constant of the oxide, but causes higher dielectric leakage, which can be suppressed by the SiO2 interlayer. High-field stress under constant electric field is performed on the stacked/nonstacked Hf-Ti oxides and oxynitrides, and it turns out that the two oxynitrides show a much smaller flatband shift and a less stress-induced leakage current compared with the two oxides. Based on these results, the Hfx Ti1-x ON SiO2 stack could be a promising high- k gate dielectric for SiC MOS devices with enhanced reliability. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleImproved high-field reliability for a SiC metal-oxide-semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=102&issue=5&spage=054515&epage=1 &date=2007&atitle=Improved+high-field+reliability+for+a+SiC+metal-oxide-semiconductor+device+by+the+incorporation+of+nitrogen+into+its+HfTiO+gate+dielectricen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2776254en_HK
dc.identifier.scopuseid_2-s2.0-34548630910en_HK
dc.identifier.hkuros150341-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34548630910&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume102en_HK
dc.identifier.issue5en_HK
dc.identifier.isiWOS:000249474100094-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLin, LM=8642604900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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