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Article: High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer

TitleHigh efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer
Authors
Zhang, HDai, YMa, DChoy, WCH
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 12, article no. 123504, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2787877
AbstractAn interconnecting layer of Al (2 nm)/WO3 (3 nm)/Au (16 nm) was studied for application in tandem organic light-emitting devices. It can be seen that the Al/WO3/Au structure plays the role of an excellent interconnecting layer. The introduction of WO3 in the connection unit significantly improves the device efficiency as compared to the case of Al/Au. Thus, the current efficiency of the two-unit tandem devices is enhanced by two factors with respect to the one-unit devices. The green two-unit tandem device of indium tin oxide/MoO3/4,4-N,N-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl(NPB)/tris(8-hydroxylquinoline) aluminum (Alq3):10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]quinolizin-11-one (C545T)/Alq3/LiF/Al/WO3/Au/MoO3/NPB/Alq3:C545T/Alq3/LiF/Al showed a maximum current efficiency of 33.9 cd/A and a power efficiency of 12.0 lm/W.
Persistent Identifierhttp://hdl.handle.net/10722/57437
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000249667200116
Errata
http://dx.doi.org/10.1063/1.2901041

 

DC FieldValueLanguage
dc.contributor.authorZhang, Hen_HK
dc.contributor.authorDai, Yen_HK
dc.contributor.authorMa, Den_HK
dc.contributor.authorChoy, WCHen_HK
dc.date.accessioned2010-04-12T01:36:50Z-
dc.date.available2010-04-12T01:36:50Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 12, article no. 123504, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57437-
dc.description.abstractAn interconnecting layer of Al (2 nm)/WO3 (3 nm)/Au (16 nm) was studied for application in tandem organic light-emitting devices. It can be seen that the Al/WO3/Au structure plays the role of an excellent interconnecting layer. The introduction of WO3 in the connection unit significantly improves the device efficiency as compared to the case of Al/Au. Thus, the current efficiency of the two-unit tandem devices is enhanced by two factors with respect to the one-unit devices. The green two-unit tandem device of indium tin oxide/MoO3/4,4-N,N-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl(NPB)/tris(8-hydroxylquinoline) aluminum (Alq3):10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]quinolizin-11-one (C545T)/Alq3/LiF/Al/WO3/Au/MoO3/NPB/Alq3:C545T/Alq3/LiF/Al showed a maximum current efficiency of 33.9 cd/A and a power efficiency of 12.0 lm/W.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 91 n. 12, article no. 123504, p. 1-3 and may be found at https://doi.org/10.1063/1.2787877-
dc.subjectPhysics engineeringen_HK
dc.titleHigh efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&issue=12&spage=123504&epage=1 &date=2007&atitle=High+efficiency+tandem+organic+light-emitting+devices+with+Al/WO3/Au+interconnecting+layeren_HK
dc.identifier.emailZhang, H: hmzhang@ciac.jl.cnen_HK
dc.identifier.emailMa, D: mdg1014@ciac.jl.cnen_HK
dc.identifier.emailChoy, WCH: wchchoy@hkucc.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2787877en_HK
dc.identifier.scopuseid_2-s2.0-34648837363-
dc.identifier.hkuros147709-
dc.identifier.volume91-
dc.identifier.issue12-
dc.identifier.spagearticle no. 123504, p. 1-
dc.identifier.epagearticle no. 123504, p. 3-
dc.identifier.isiWOS:000249667200116-
dc.relation.erratumdoi:10.1063/1.2901041-
dc.identifier.issnl0003-6951-

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