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Article: Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
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TitleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
 
AuthorsLiu, Y2
Chen, TP2
Ding, L2
Yang, M2
Wong, JI2
Ng, CY2
Yu, SF2
Li, ZX2
Yuen, C2
Zhu, FR3
Tan, MC3
Fung, S1
 
KeywordsPhysics engineering
 
Issue Date2007
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2007, v. 101 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2713946
 
AbstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.
 
ISSN0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
DOIhttp://dx.doi.org/10.1063/1.2713946
 
ISI Accession Number IDWOS:000246891500127
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLiu, Y
 
dc.contributor.authorChen, TP
 
dc.contributor.authorDing, L
 
dc.contributor.authorYang, M
 
dc.contributor.authorWong, JI
 
dc.contributor.authorNg, CY
 
dc.contributor.authorYu, SF
 
dc.contributor.authorLi, ZX
 
dc.contributor.authorYuen, C
 
dc.contributor.authorZhu, FR
 
dc.contributor.authorTan, MC
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-04-12T01:33:36Z
 
dc.date.available2010-04-12T01:33:36Z
 
dc.date.issued2007
 
dc.description.abstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2007, v. 101 n. 10 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2713946
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2713946
 
dc.identifier.hkuros127172
 
dc.identifier.isiWOS:000246891500127
 
dc.identifier.issn0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
dc.identifier.issue10
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-34249908947
 
dc.identifier.urihttp://hdl.handle.net/10722/57344
 
dc.identifier.volume101
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
 
dc.typeArticle
 
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<contributor.author>Wong, JI</contributor.author>
<contributor.author>Ng, CY</contributor.author>
<contributor.author>Yu, SF</contributor.author>
<contributor.author>Li, ZX</contributor.author>
<contributor.author>Yuen, C</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. Institute of Materials Research and Engineering, A-Star, Singapore