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Article: Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

TitleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2007, v. 101 n. 10 How to Cite?
AbstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57344
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, ZXen_HK
dc.contributor.authorYuen, Cen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorTan, MCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-04-12T01:33:36Z-
dc.date.available2010-04-12T01:33:36Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Applied Physics, 2007, v. 101 n. 10en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57344-
dc.description.abstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=101&issue=10&spage=104306&epage=1 &date=2007&atitle=Influence+of+charge+trapping+on+electroluminescence+from+Si-nanocrystal+light+emitting+structureen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2713946en_HK
dc.identifier.scopuseid_2-s2.0-34249908947en_HK
dc.identifier.hkuros127172-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249908947&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume101en_HK
dc.identifier.issue10en_HK
dc.identifier.isiWOS:000246891500127-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridYu, SF=8602540300en_HK
dc.identifier.scopusauthoridLi, ZX=36067078500en_HK
dc.identifier.scopusauthoridYuen, C=7101633267en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridTan, MC=16041148100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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