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Article: Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

TitleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
Authors
Liu, YChen, TPDing, LYang, MWong, JINg, CYYu, SFLi, ZXYuen, CZhu, FRTan, MCFung, S
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2007, v. 101 n. 10, article no. 104306 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2713946
AbstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57344
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000246891500127
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, ZXen_HK
dc.contributor.authorYuen, Cen_HK
dc.contributor.authorZhu, FRen_HK
dc.contributor.authorTan, MCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-04-12T01:33:36Z-
dc.date.available2010-04-12T01:33:36Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal of Applied Physics, 2007, v. 101 n. 10, article no. 104306-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57344-
dc.description.abstractWe report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2007, v. 101 n. 10, article no. 104306 and may be found at https://doi.org/10.1063/1.2713946-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of charge trapping on electroluminescence from Si-nanocrystal light emitting structureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=101&issue=10&spage=104306&epage=1 &date=2007&atitle=Influence+of+charge+trapping+on+electroluminescence+from+Si-nanocrystal+light+emitting+structureen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2713946en_HK
dc.identifier.scopuseid_2-s2.0-34249908947en_HK
dc.identifier.hkuros127172-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249908947&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume101en_HK
dc.identifier.issue10en_HK
dc.identifier.spagearticle no. 104306-
dc.identifier.epagearticle no. 104306-
dc.identifier.isiWOS:000246891500127-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridYu, SF=8602540300en_HK
dc.identifier.scopusauthoridLi, ZX=36067078500en_HK
dc.identifier.scopusauthoridYuen, C=7101633267en_HK
dc.identifier.scopusauthoridZhu, FR=7202254675en_HK
dc.identifier.scopusauthoridTan, MC=16041148100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0021-8979-

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