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Article: Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

TitleCharge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
Authors
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2007, v. 101 n. 12 How to Cite?
AbstractA layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 °C. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57340
ISSN
2014 Impact Factor: 2.183
2014 SCImago Journal Rankings: 0.912
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, Men_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorTrigg, ADen_HK
dc.contributor.authorTung, CHen_HK
dc.contributor.authorLi, CMen_HK
dc.date.accessioned2010-04-12T01:33:31Z-
dc.date.available2010-04-12T01:33:31Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of Applied Physics, 2007, v. 101 n. 12en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57340-
dc.description.abstractA layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 °C. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleCharge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=101&issue=12&spage=124313&epage=1 &date=2007&atitle=Charge+trapping+and+retention+behaviors+of+Ge+nanocrystals+distributed+in+the+gate+oxide+near+the+gate+synthesized+by+low-energy+ion+implantationen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2749470en_HK
dc.identifier.scopuseid_2-s2.0-34547356059en_HK
dc.identifier.hkuros130067-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547356059&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume101en_HK
dc.identifier.issue12en_HK
dc.identifier.isiWOS:000247625700122-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridTrigg, AD=8835395900en_HK
dc.identifier.scopusauthoridTung, CH=7201776867en_HK
dc.identifier.scopusauthoridLi, CM=26031502700en_HK

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