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Article: Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
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TitleCharge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
 
AuthorsYang, M2
Chen, TP2
Wong, JI2
Ng, CY2
Liu, Y2
Ding, L2
Fung, S1
Trigg, AD3
Tung, CH3
Li, CM2
 
KeywordsPhysics engineering
 
Issue Date2007
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal Of Applied Physics, 2007, v. 101 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2749470
 
AbstractA layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 °C. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. © 2007 American Institute of Physics.
 
ISSN0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
DOIhttp://dx.doi.org/10.1063/1.2749470
 
ISI Accession Number IDWOS:000247625700122
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorYang, M
 
dc.contributor.authorChen, TP
 
dc.contributor.authorWong, JI
 
dc.contributor.authorNg, CY
 
dc.contributor.authorLiu, Y
 
dc.contributor.authorDing, L
 
dc.contributor.authorFung, S
 
dc.contributor.authorTrigg, AD
 
dc.contributor.authorTung, CH
 
dc.contributor.authorLi, CM
 
dc.date.accessioned2010-04-12T01:33:31Z
 
dc.date.available2010-04-12T01:33:31Z
 
dc.date.issued2007
 
dc.description.abstractA layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 °C. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. © 2007 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal Of Applied Physics, 2007, v. 101 n. 12 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2749470
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2749470
 
dc.identifier.hkuros130067
 
dc.identifier.isiWOS:000247625700122
 
dc.identifier.issn0021-8979
2012 Impact Factor: 2.21
2012 SCImago Journal Rankings: 0.990
 
dc.identifier.issue12
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-34547356059
 
dc.identifier.urihttp://hdl.handle.net/10722/57340
 
dc.identifier.volume101
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.publisher.placeUnited States
 
dc.relation.ispartofJournal of Applied Physics
 
dc.relation.referencesReferences in Scopus
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleCharge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
 
dc.typeArticle
 
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<contributor.author>Ng, CY</contributor.author>
<contributor.author>Liu, Y</contributor.author>
<contributor.author>Ding, L</contributor.author>
<contributor.author>Fung, S</contributor.author>
<contributor.author>Trigg, AD</contributor.author>
<contributor.author>Tung, CH</contributor.author>
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<description.abstract>A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800 &#176;C. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time. &#169; 2007 American Institute of Physics.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Nanyang Technological University
  3. null