File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Effect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctions

TitleEffect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctions
Authors
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2008, v. 103 n. 7, p. 07A913-1 - 07A913-3 How to Cite?
Abstract
The epitaxial self-doped La0.9MnO3 thin film was deposited on a 0.8 wt %Nb-doped SrTiO3 substrate by pulse laser deposition method to form a bilayer p-n junction with an area of 8 mm2. The isothermal current-voltage loops measured from 10 to 380 K with an interval of 10 K in applied magnetic fields up to 7 T show typical temperature-dependent rectifying characteristic and asymmetrical hysteresis. The effect of magnetic field on the rectifying property is very small for the temperature above 150 K and a strong asymmetrical effect on the rectifying property below 150 K. In the low temperature region, although the diffusive voltage Vd is not affected by the applied magnetic field, the breakdown voltage Vb decreases with the increasing of magnetic field. At 10 K, the relative ratio of voltage [Vb(0)−Vb(7 T)]/Vb(0) is about 14%, showing a magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.
Persistent Identifierhttp://hdl.handle.net/10722/57336
ISSN
2013 Impact Factor: 2.185
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, ZHen_HK
dc.contributor.authorYu, GLen_HK
dc.contributor.authorNie, Yen_HK
dc.contributor.authorWu, ZFen_HK
dc.contributor.authorQiu, Len_HK
dc.contributor.authorLuo, Zen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-04-12T01:33:27Z-
dc.date.available2010-04-12T01:33:27Z-
dc.date.issued2008en_HK
dc.identifier.citationJournal of Applied Physics, 2008, v. 103 n. 7, p. 07A913-1 - 07A913-3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57336-
dc.description.abstractThe epitaxial self-doped La0.9MnO3 thin film was deposited on a 0.8 wt %Nb-doped SrTiO3 substrate by pulse laser deposition method to form a bilayer p-n junction with an area of 8 mm2. The isothermal current-voltage loops measured from 10 to 380 K with an interval of 10 K in applied magnetic fields up to 7 T show typical temperature-dependent rectifying characteristic and asymmetrical hysteresis. The effect of magnetic field on the rectifying property is very small for the temperature above 150 K and a strong asymmetrical effect on the rectifying property below 150 K. In the low temperature region, although the diffusive voltage Vd is not affected by the applied magnetic field, the breakdown voltage Vb decreases with the increasing of magnetic field. At 10 K, the relative ratio of voltage [Vb(0)−Vb(7 T)]/Vb(0) is about 14%, showing a magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleEffect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=103&issue=7&spage=07A913&epage=1 &date=2008&atitle=Effect+of+applied+magnetic+field+on+the+rectifying+characteristics+in+self-doped+La0.9MnO3/0.8+wt+%Nb-SrTiO3+heteroepitaxial+junctionsen_HK
dc.identifier.emailWang, ZH: zhwang@nju.edu.cnen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2836964en_HK
dc.identifier.scopuseid_2-s2.0-42149147301-
dc.identifier.hkuros141445-
dc.identifier.isiWOS:000255043200169-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats