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Article: Effect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctions
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TitleEffect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctions
 
AuthorsWang, ZH2 1
Yu, GL
Nie, Y
Wu, ZF
Qiu, L
Luo, Z2
Gao, J2
 
KeywordsPhysics engineering
 
Issue Date2008
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
CitationJournal of Applied Physics, 2008, v. 103 n. 7, p. 07A913-1 - 07A913-3 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2836964
 
AbstractThe epitaxial self-doped La0.9MnO3 thin film was deposited on a 0.8 wt %Nb-doped SrTiO3 substrate by pulse laser deposition method to form a bilayer p-n junction with an area of 8 mm2. The isothermal current-voltage loops measured from 10 to 380 K with an interval of 10 K in applied magnetic fields up to 7 T show typical temperature-dependent rectifying characteristic and asymmetrical hysteresis. The effect of magnetic field on the rectifying property is very small for the temperature above 150 K and a strong asymmetrical effect on the rectifying property below 150 K. In the low temperature region, although the diffusive voltage Vd is not affected by the applied magnetic field, the breakdown voltage Vb decreases with the increasing of magnetic field. At 10 K, the relative ratio of voltage [Vb(0)−Vb(7 T)]/Vb(0) is about 14%, showing a magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.
 
ISSN0021-8979
2013 Impact Factor: 2.185
 
DOIhttp://dx.doi.org/10.1063/1.2836964
 
ISI Accession Number IDWOS:000255043200169
 
DC FieldValue
dc.contributor.authorWang, ZH
 
dc.contributor.authorYu, GL
 
dc.contributor.authorNie, Y
 
dc.contributor.authorWu, ZF
 
dc.contributor.authorQiu, L
 
dc.contributor.authorLuo, Z
 
dc.contributor.authorGao, J
 
dc.date.accessioned2010-04-12T01:33:27Z
 
dc.date.available2010-04-12T01:33:27Z
 
dc.date.issued2008
 
dc.description.abstractThe epitaxial self-doped La0.9MnO3 thin film was deposited on a 0.8 wt %Nb-doped SrTiO3 substrate by pulse laser deposition method to form a bilayer p-n junction with an area of 8 mm2. The isothermal current-voltage loops measured from 10 to 380 K with an interval of 10 K in applied magnetic fields up to 7 T show typical temperature-dependent rectifying characteristic and asymmetrical hysteresis. The effect of magnetic field on the rectifying property is very small for the temperature above 150 K and a strong asymmetrical effect on the rectifying property below 150 K. In the low temperature region, although the diffusive voltage Vd is not affected by the applied magnetic field, the breakdown voltage Vb decreases with the increasing of magnetic field. At 10 K, the relative ratio of voltage [Vb(0)−Vb(7 T)]/Vb(0) is about 14%, showing a magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationJournal of Applied Physics, 2008, v. 103 n. 7, p. 07A913-1 - 07A913-3 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2836964
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2836964
 
dc.identifier.hkuros141445
 
dc.identifier.isiWOS:000255043200169
 
dc.identifier.issn0021-8979
2013 Impact Factor: 2.185
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-42149147301
 
dc.identifier.urihttp://hdl.handle.net/10722/57336
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
 
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleEffect of applied magnetic field on the rectifying characteristics in self-doped La0.9MnO3/0.8 wt %Nb-SrTiO3 heteroepitaxial junctions
 
dc.typeArticle
 
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<item><contributor.author>Wang, ZH</contributor.author>
<contributor.author>Yu, GL</contributor.author>
<contributor.author>Nie, Y</contributor.author>
<contributor.author>Wu, ZF</contributor.author>
<contributor.author>Qiu, L</contributor.author>
<contributor.author>Luo, Z</contributor.author>
<contributor.author>Gao, J</contributor.author>
<date.accessioned>2010-04-12T01:33:27Z</date.accessioned>
<date.available>2010-04-12T01:33:27Z</date.available>
<date.issued>2008</date.issued>
<identifier.citation>Journal of Applied Physics, 2008, v. 103 n. 7, p. 07A913-1 - 07A913-3</identifier.citation>
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<description.abstract>The epitaxial self-doped La0.9MnO3 thin film was deposited on a 0.8 wt %Nb-doped SrTiO3 substrate by pulse laser deposition method to form a bilayer p-n junction with an area of 8  mm2. The isothermal current-voltage loops measured from 10  to  380  K with an interval of 10  K in applied magnetic fields up to 7  T show typical temperature-dependent rectifying characteristic and asymmetrical hysteresis. The effect of magnetic field on the rectifying property is very small for the temperature above 150  K and a strong asymmetrical effect on the rectifying property below 150  K. In the low temperature region, although the diffusive voltage Vd is not affected by the applied magnetic field, the breakdown voltage Vb decreases with the increasing of magnetic field. At 10  K, the relative ratio of voltage [Vb(0)&#8722;Vb(7  T)]/Vb(0) is about 14%, showing a magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.</description.abstract>
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Author Affiliations
  1. Nanjing University
  2. The University of Hong Kong