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Article: Metastable resistivity of La0.8Ca0.2MnO3 manganite thin films

TitleMetastable resistivity of La0.8Ca0.2MnO3 manganite thin films
Authors
KeywordsPhysics
Issue Date2007
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2007, v. 75 n. 10, p. 104419-1 - 104419-8 How to Cite?
AbstractTransport properties of La0.8Ca0.2MnO3 thin films 15 and 130 nm thick have been investigated and confronted with the properties of bulk single crystals of the same composition. It has been found that low-temperature resistivity of the films is sensitive to electric current and/or field treatment and thermal history of the sample. Thin films exhibit a variety of metastable resistive states and spontaneously evolve toward high-resistivity state in which the films exhibit highly nonlinear transport behavior at low temperatures. Nonlinear V-I characteristics are well described by indirect tunneling model. The memory of the resistivity can be, at least partly, erased by a heat treatment at temperatures above the memory erasing temperature. The memory erasing temperature for thin films, T=450 K, is significantly higher than that of single crystals. The results are interpreted in the context of strain driven phase separation. Coexistence of two ferromagnetic phases with different orbital orders and different conductivities is influenced by strains due to thermal cycling and current flow.
Persistent Identifierhttp://hdl.handle.net/10722/57334
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMarkovich, Ven_HK
dc.contributor.authorJung, Gen_HK
dc.contributor.authorYuzhelevskii, Yen_HK
dc.contributor.authorGorodetsky, Gen_HK
dc.contributor.authorHu, FXen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-04-12T01:33:24Z-
dc.date.available2010-04-12T01:33:24Z-
dc.date.issued2007en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2007, v. 75 n. 10, p. 104419-1 - 104419-8en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57334-
dc.description.abstractTransport properties of La0.8Ca0.2MnO3 thin films 15 and 130 nm thick have been investigated and confronted with the properties of bulk single crystals of the same composition. It has been found that low-temperature resistivity of the films is sensitive to electric current and/or field treatment and thermal history of the sample. Thin films exhibit a variety of metastable resistive states and spontaneously evolve toward high-resistivity state in which the films exhibit highly nonlinear transport behavior at low temperatures. Nonlinear V-I characteristics are well described by indirect tunneling model. The memory of the resistivity can be, at least partly, erased by a heat treatment at temperatures above the memory erasing temperature. The memory erasing temperature for thin films, T=450 K, is significantly higher than that of single crystals. The results are interpreted in the context of strain driven phase separation. Coexistence of two ferromagnetic phases with different orbital orders and different conductivities is influenced by strains due to thermal cycling and current flow.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleMetastable resistivity of La0.8Ca0.2MnO3 manganite thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=75&issue=10&spage=104419&epage=1 &date=2007&atitle=Metastable+resistivity+of+La0.8Ca0.2MnO3+manganite+thin+filmsen_HK
dc.identifier.emailHu, FX: fxhu2002@hku.hken_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.75.104419en_HK
dc.identifier.scopuseid_2-s2.0-33947505233-
dc.identifier.hkuros141340-
dc.identifier.isiWOS:000245329100064-

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