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Article: Charging mechanism in a SiO 2 matrix embedded with Si nanocrystals

TitleCharging mechanism in a SiO 2 matrix embedded with Si nanocrystals
Authors
KeywordsPhysics engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2006, v. 100 n. 9, article no. 096111 How to Cite?
AbstractOne of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-SiSi O2 interface, plays the dominant role in the charging effect. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57333
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFu, YQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-04-12T01:33:23Z-
dc.date.available2010-04-12T01:33:23Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal of Applied Physics, 2006, v. 100 n. 9, article no. 096111-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57333-
dc.description.abstractOne of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-SiSi O2 interface, plays the dominant role in the charging effect. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 100 n. 9, article no. 096111 and may be found at https://doi.org/10.1063/1.2374929-
dc.subjectPhysics engineeringen_HK
dc.titleCharging mechanism in a SiO 2 matrix embedded with Si nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=100&issue=9&spage=096111&epage=1 &date=2006&atitle=Charging+mechanism+in+a+SiO2+matrix+embedded+with+Si+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2374929en_HK
dc.identifier.scopuseid_2-s2.0-33751077473en_HK
dc.identifier.hkuros125546-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33751077473&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 096111-
dc.identifier.epagearticle no. 096111-
dc.identifier.isiWOS:000242041500131-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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