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Article: Charging mechanism in a SiO 2 matrix embedded with Si nanocrystals

TitleCharging mechanism in a SiO 2 matrix embedded with Si nanocrystals
Authors
KeywordsPhysics engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2006, v. 100 n. 9 How to Cite?
AbstractOne of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-SiSi O2 interface, plays the dominant role in the charging effect. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57333
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFu, YQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-04-12T01:33:23Z-
dc.date.available2010-04-12T01:33:23Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Applied Physics, 2006, v. 100 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57333-
dc.description.abstractOne of the applications of a Si nanocrystals (nc-Si) embedded in a Si O2 matrix is in the area of nonvolatile memory devices based on the charge storage in the material system. However, whether the charge trapping mainly occurs at the nc-SiSi O2 interface or in the nc-Si is still unclear. In this work, by x-ray photoemission spectroscopy analysis of the Si 2p peaks, the concentrations of both the nc-Si and the Si suboxides that exist at the nc-SiSi O2 interface are determined as a function of thermal annealing, and the charging effect is also measured by monitoring the shift of the surface C 1s peak. It is observed that the annealing-caused reduction of the total concentration of the interfacial suboxides is much faster than that of both the C 1s shift and the nc-Si concentration. In addition, the trend of the C 1s shift coincides with that of the nc-Si concentration. The results suggest that the Si nanocrystal, rather than the nc-SiSi O2 interface, plays the dominant role in the charging effect. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleCharging mechanism in a SiO 2 matrix embedded with Si nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=100&issue=9&spage=096111&epage=1 &date=2006&atitle=Charging+mechanism+in+a+SiO2+matrix+embedded+with+Si+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2374929en_HK
dc.identifier.scopuseid_2-s2.0-33751077473en_HK
dc.identifier.hkuros125546-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33751077473&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000242041500131-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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