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Article: Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

TitleInfluence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts
Authors
KeywordsPhysics engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 3 How to Cite?
AbstractIndium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57331
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorCheung, CKen_HK
dc.contributor.authorCheung, CHen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorTao, XMen_HK
dc.date.accessioned2010-04-12T01:33:20Z-
dc.date.available2010-04-12T01:33:20Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57331-
dc.description.abstractIndium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200°C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. © 2005 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contactsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=3&spage=033503&epage=1 &date=2006&atitle=Influence+of+indium-tin-oxide+thin-film+quality+on+reverse+leakage+current+of+indium-tin-oxide/n-GaN+Schottky+contactsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2227627en_HK
dc.identifier.scopuseid_2-s2.0-33746309216en_HK
dc.identifier.hkuros117194-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746309216&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue3en_HK
dc.identifier.isiWOS:000239174100109-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=14038407200en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK
dc.identifier.scopusauthoridCheung, CH=8618960900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridTao, XM=7202692140en_HK

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