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Article: Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

TitlePhotoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions
Authors
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 18 How to Cite?
AbstractHeterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57324
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLuo, Zen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorYip, CTen_HK
dc.contributor.authorZhang, GBen_HK
dc.date.accessioned2010-04-12T01:33:12Z-
dc.date.available2010-04-12T01:33:12Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 18en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57324-
dc.description.abstractHeterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titlePhotoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=18&spage=182501&epage=1 &date=2008&atitle=Photoelectric+response+of+Schottky+barrier+in+La0.7Ca0.3MnO3/Nb:SrTiO3+heterojunctionsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2920765en_HK
dc.identifier.scopuseid_2-s2.0-43349102714en_HK
dc.identifier.hkuros152725-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43349102714&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue18en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000256485700033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLuo, Z=14625390600en_HK
dc.identifier.scopusauthoridGao, J=37262424300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridYip, CT=14043063100en_HK
dc.identifier.scopusauthoridZhang, GB=8221959900en_HK

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