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Article: Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

TitlePhotoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions
Authors
Luo, ZGao, JDjurišić, ABYip, CTZhang, GB
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 18, article no. 182501 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2920765
AbstractHeterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57324
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000256485700033
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLuo, Zen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorYip, CTen_HK
dc.contributor.authorZhang, GBen_HK
dc.date.accessioned2010-04-12T01:33:12Z-
dc.date.available2010-04-12T01:33:12Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 18, article no. 182501-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57324-
dc.description.abstractHeterojunctions composed of La0.7 Ca0.3 Mn O3 and 0.05 wt % Nb-doped SrTi O3 were fabricated using pulse laser deposition. The current-voltage characteristics of such heterojunctions can be described by tunneling with an effective Schottky barrier. These junctions showed significant response to ultraviolet and visible light. Band-to-band and internal photoemission were characterized by photoelectric experiments. A quantum efficiency of about 86% was observed at an incident energy of ∼3.95 eV, which corresponds to the band-to-band excitation of electrons in Nb:SrTi O3. From the internal photoemission, the height of Schottky barrier was determined as 1.64 eV. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 18, article no. 182501 and may be found at https://doi.org/10.1063/1.2920765-
dc.subjectPhysics engineeringen_HK
dc.titlePhotoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=18&spage=182501&epage=1 &date=2008&atitle=Photoelectric+response+of+Schottky+barrier+in+La0.7Ca0.3MnO3/Nb:SrTiO3+heterojunctionsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2920765en_HK
dc.identifier.scopuseid_2-s2.0-43349102714en_HK
dc.identifier.hkuros152725-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43349102714&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue18en_HK
dc.identifier.spagearticle no. 182501-
dc.identifier.epagearticle no. 182501-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000256485700033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLuo, Z=14625390600en_HK
dc.identifier.scopusauthoridGao, J=37262424300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridYip, CT=14043063100en_HK
dc.identifier.scopusauthoridZhang, GB=8221959900en_HK
dc.identifier.issnl0003-6951-

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