Article: Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

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TitleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
AuthorsZhou, B1 2
Liu, CX3
Shen, SQ1
KeywordsPhysics
Issue Date2007
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
CitationEpl, 2007, v. 79 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/79/47010
AbstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.
DescriptionArticle no. 47010
ISSN0295-5075
2011 Impact Factor: 2.171
2011 SCImago Journal Rankings: 0.098
DOIhttp://dx.doi.org/10.1209/0295-5075/79/47010
ReferencesReferences in Scopus
GrantsSpin current, anomalous and spin Hall effects in two-dimensional electron gas with spin-orbit coupling
DC Field
Value
dc.contributor.authorZhou, B
dc.contributor.authorLiu, CX
dc.contributor.authorShen, SQ
dc.date.accessioned2010-04-12T01:33:05Z
dc.date.available2010-04-12T01:33:05Z
dc.date.issued2007
dc.description.abstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.
dc.description.grantSpin current, anomalous and spin Hall effects in two-dimensional electron gas with spin-orbit coupling
dc.description.grantcode82458
dc.description.naturepublished_or_final_version
dc.descriptionArticle no. 47010
dc.identifier.citationEpl, 2007, v. 79 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/79/47010
dc.identifier.doihttp://dx.doi.org/10.1209/0295-5075/79/47010
dc.identifier.hkuros136998
dc.identifier.isiWOS:000248980000018
dc.identifier.issn0295-5075
2011 Impact Factor: 2.171
2011 SCImago Journal Rankings: 0.098
dc.identifier.issue4
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-79051469847
dc.identifier.urihttp://hdl.handle.net/10722/57319
dc.identifier.volume79
dc.languageeng
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
dc.publisher.placeUnited Kingdom
dc.relation.ispartofEPL
dc.relation.referencesReferences in Scopus
dc.rightsEurophysics Letters. Copyright © E D P Sciences.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.rightsThe original publication is available at www.edpsciences.org
dc.subjectPhysics
dc.titleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Hubei University
  3. Tsinghua University