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Article: Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

TitleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
Authors
KeywordsPhysics
Issue Date2007
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
Citation
Epl, 2007, v. 79 n. 4, Article no. 47010 How to Cite?
AbstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.
Persistent Identifierhttp://hdl.handle.net/10722/57319
ISSN
2014 Impact Factor: 2.095
2014 SCImago Journal Rankings: 0.449
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhou, Ben_HK
dc.contributor.authorLiu, CXen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2010-04-12T01:33:05Z-
dc.date.available2010-04-12T01:33:05Z-
dc.date.issued2007en_HK
dc.identifier.citationEpl, 2007, v. 79 n. 4, Article no. 47010en_HK
dc.identifier.issn0295-5075en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57319-
dc.description.abstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075en_HK
dc.relation.ispartofEPLen_HK
dc.rightsEurophysics Letters. Copyright © E D P Sciences.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsThe original publication is available at www.edpsciences.orgen_HK
dc.subjectPhysicsen_HK
dc.titleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0295-5075&volume=79&issue=4&spage=47010&epage=1 &date=2007&atitle=Topological+quantum+phase+transition+and+the+Berry+phase+near+the+Fermi+surface+in+hole-doped+quantum+wellsen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1209/0295-5075/79/47010en_HK
dc.identifier.scopuseid_2-s2.0-79051469847en_HK
dc.identifier.hkuros136998-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79051469847&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume79en_HK
dc.identifier.issue4en_HK
dc.identifier.isiWOS:000248980000018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridZhou, B=7401906664en_HK
dc.identifier.scopusauthoridLiu, CX=26659930800en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK

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