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Article: Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
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TitleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
 
AuthorsZhou, B1 2
Liu, CX3
Shen, SQ1
 
KeywordsPhysics
 
Issue Date2007
 
PublisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
 
CitationEpl, 2007, v. 79 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/79/47010
 
AbstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.
 
DescriptionArticle no. 47010
 
ISSN0295-5075
2013 Impact Factor: 2.269
 
DOIhttp://dx.doi.org/10.1209/0295-5075/79/47010
 
ISI Accession Number IDWOS:000248980000018
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorZhou, B
 
dc.contributor.authorLiu, CX
 
dc.contributor.authorShen, SQ
 
dc.date.accessioned2010-04-12T01:33:05Z
 
dc.date.available2010-04-12T01:33:05Z
 
dc.date.issued2007
 
dc.description.abstractWe propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. © Europhysics Letters Association.
 
dc.description.naturepublished_or_final_version
 
dc.descriptionArticle no. 47010
 
dc.identifier.citationEpl, 2007, v. 79 n. 4 [How to Cite?]
DOI: http://dx.doi.org/10.1209/0295-5075/79/47010
 
dc.identifier.doihttp://dx.doi.org/10.1209/0295-5075/79/47010
 
dc.identifier.hkuros136998
 
dc.identifier.isiWOS:000248980000018
 
dc.identifier.issn0295-5075
2013 Impact Factor: 2.269
 
dc.identifier.issue4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-79051469847
 
dc.identifier.urihttp://hdl.handle.net/10722/57319
 
dc.identifier.volume79
 
dc.languageeng
 
dc.publisherInstitute of Physics Publishing Ltd.. The Journal's web site is located at http://iopscience.iop.org/0295-5075
 
dc.publisher.placeUnited Kingdom
 
dc.relation.ispartofEPL
 
dc.relation.referencesReferences in Scopus
 
dc.rightsEurophysics Letters. Copyright © E D P Sciences.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.rightsThe original publication is available at www.edpsciences.org
 
dc.subjectPhysics
 
dc.titleTopological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells
 
dc.typeArticle
 
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<description.abstract>We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed. &#169; Europhysics Letters Association.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hubei University
  3. Tsinghua University