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Article: ZnO nanorods for solar cells: Hydrothermal growth versus vapor deposition

TitleZnO nanorods for solar cells: Hydrothermal growth versus vapor deposition
Authors
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 13 How to Cite?
AbstractPerformance of dye-sensitized solar cells (DSSCs) based on ZnO nanorods prepared by hydrothermal and vapor-deposition methods has been investigated. In spite of their inferior optical properties, DSSCs based on hydrothermally grown rods exhibit higher power conversion efficiency, which can be attributed to the higher dye adsorption. Hydrothermally grown and vapor deposited nanorods also exhibit different dependence of photovoltaic performance on the annealing conditions of the rods, indicating significant effect of the native defects on the achievable photocurrent and power conversion efficiency. Efficiency of 0.22% is obtained for both as grown hydrothermally grown nanorods and vapor deposited nanorods annealed in oxygen at 200 °C. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57307
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-04-12T01:32:44Z-
dc.date.available2010-04-12T01:32:44Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 13en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57307-
dc.description.abstractPerformance of dye-sensitized solar cells (DSSCs) based on ZnO nanorods prepared by hydrothermal and vapor-deposition methods has been investigated. In spite of their inferior optical properties, DSSCs based on hydrothermally grown rods exhibit higher power conversion efficiency, which can be attributed to the higher dye adsorption. Hydrothermally grown and vapor deposited nanorods also exhibit different dependence of photovoltaic performance on the annealing conditions of the rods, indicating significant effect of the native defects on the achievable photocurrent and power conversion efficiency. Efficiency of 0.22% is obtained for both as grown hydrothermally grown nanorods and vapor deposited nanorods annealed in oxygen at 200 °C. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleZnO nanorods for solar cells: Hydrothermal growth versus vapor depositionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=13&spage=133507&epage=1 &date=2008&atitle=ZnO+nanorods+for+solar+cells:+hydrothermal+growth+versus+vapor+depositionen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2906370en_HK
dc.identifier.scopuseid_2-s2.0-41649083551en_HK
dc.identifier.hkuros141550-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-41649083551&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue13en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000254669900104-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHsu, YF=26640404800en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK

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