Article: NiOZnO light emitting diodes by solution-based growth

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TitleNiOZnO light emitting diodes by solution-based growth
AuthorsXi, YY1
Hsu, YF1
Djurišić, AB1
Ng, AMC1
Chan, WK1
Tam, HL2
Cheah, KW2
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
CitationApplied Physics Letters, 2008, v. 92 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2898505
AbstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.
ISSN0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
DOIhttp://dx.doi.org/10.1063/1.2898505
ISI Accession Number IDWOS:000254292400108
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorXi, YY
dc.contributor.authorHsu, YF
dc.contributor.authorDjurišić, AB
dc.contributor.authorNg, AMC
dc.contributor.authorChan, WK
dc.contributor.authorTam, HL
dc.contributor.authorCheah, KW
dc.date.accessioned2010-04-12T01:32:40Z
dc.date.available2010-04-12T01:32:40Z
dc.date.issued2008
dc.description.abstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2898505
dc.identifier.doihttp://dx.doi.org/10.1063/1.2898505
dc.identifier.hkuros141553
dc.identifier.isiWOS:000254292400108
dc.identifier.issn0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
dc.identifier.issue11
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-41049102576
dc.identifier.urihttp://hdl.handle.net/10722/57304
dc.identifier.volume92
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
dc.publisher.placeUnited States
dc.relation.ispartofApplied Physics Letters
dc.relation.referencesReferences in Scopus
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics engineering
dc.titleNiOZnO light emitting diodes by solution-based growth
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University