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Article: NiOZnO light emitting diodes by solution-based growth
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TitleNiOZnO light emitting diodes by solution-based growth
 
AuthorsXi, YY1
Hsu, YF1
Djurišić, AB1
Ng, AMC1
Chan, WK1
Tam, HL2
Cheah, KW2
 
KeywordsPhysics engineering
 
Issue Date2008
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2008, v. 92 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2898505
 
AbstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.
 
ISSN0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
DOIhttp://dx.doi.org/10.1063/1.2898505
 
ISI Accession Number IDWOS:000254292400108
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorXi, YY
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorChan, WK
 
dc.contributor.authorTam, HL
 
dc.contributor.authorCheah, KW
 
dc.date.accessioned2010-04-12T01:32:40Z
 
dc.date.available2010-04-12T01:32:40Z
 
dc.date.issued2008
 
dc.description.abstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 11 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2898505
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2898505
 
dc.identifier.hkuros141553
 
dc.identifier.isiWOS:000254292400108
 
dc.identifier.issn0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
dc.identifier.issue11
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-41049102576
 
dc.identifier.urihttp://hdl.handle.net/10722/57304
 
dc.identifier.volume92
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleNiOZnO light emitting diodes by solution-based growth
 
dc.typeArticle
 
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<description.abstract>Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. &#169; 2008 American Institute of Physics.</description.abstract>
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Author Affiliations
  1. The University of Hong Kong
  2. Hong Kong Baptist University