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Article: NiOZnO light emitting diodes by solution-based growth

TitleNiOZnO light emitting diodes by solution-based growth
Authors
Xi, YYHsu, YFDjurišić, ABNg, AMCChan, WKTam, HLCheah, KW
KeywordsPhysics engineering
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 11, article no. 113505 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2898505
AbstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57304
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000254292400108
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXi, YYen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.date.accessioned2010-04-12T01:32:40Z-
dc.date.available2010-04-12T01:32:40Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 11, article no. 113505-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57304-
dc.description.abstractHeterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 11, article no. 113505 and may be found at https://doi.org/10.1063/1.2898505-
dc.subjectPhysics engineeringen_HK
dc.titleNiOZnO light emitting diodes by solution-based growthen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&issue=11&spage=113505&epage=1 &date=2008&atitle=NiO/ZnO+light+emitting+diodes+by+solution-based+growthen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2898505en_HK
dc.identifier.scopuseid_2-s2.0-41049102576en_HK
dc.identifier.hkuros141553-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-41049102576&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue11en_HK
dc.identifier.spagearticle no. 113505-
dc.identifier.epagearticle no. 113505-
dc.identifier.isiWOS:000254292400108-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.issnl0003-6951-

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