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Article: Interaction of O vacancies and domain structures in single crystal BaTi O3: Two-dimensional ferroelectric model

TitleInteraction of O vacancies and domain structures in single crystal BaTi O3: Two-dimensional ferroelectric model
Authors
KeywordsPhysics
Issue Date2008
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2008, v. 77 n. 9 How to Cite?
AbstractTwo-dimensional simulations on the interactions of oxygen vacancies and different domain structures in barium titanate single crystal were carried out using the phase field method. The evolution of the spontaneous polarizations and oxygen vacancies was coupled through Maxwell's equation. The results showed that two barriers near the electrodes existed in both the 90°and 180°domain structures. It has also been observed that while an intrinsic electrostatic potential drop across the 90°domain wall created the electric fields which drove the electrons and oxygen vacancies aggregate on the different sides of the domain wall, the 180°domain wall had insignificant interaction with the potential, and no electron or vacancy accumulation in 180°domain structure was observed. Polarization charge density is believed to be the origin of this difference. © 2008 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/57193
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHong, Len_HK
dc.contributor.authorSoh, AKen_HK
dc.contributor.authorDu, QGen_HK
dc.contributor.authorLi, JYen_HK
dc.date.accessioned2010-04-12T01:29:06Z-
dc.date.available2010-04-12T01:29:06Z-
dc.date.issued2008en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2008, v. 77 n. 9en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57193-
dc.description.abstractTwo-dimensional simulations on the interactions of oxygen vacancies and different domain structures in barium titanate single crystal were carried out using the phase field method. The evolution of the spontaneous polarizations and oxygen vacancies was coupled through Maxwell's equation. The results showed that two barriers near the electrodes existed in both the 90°and 180°domain structures. It has also been observed that while an intrinsic electrostatic potential drop across the 90°domain wall created the electric fields which drove the electrons and oxygen vacancies aggregate on the different sides of the domain wall, the 180°domain wall had insignificant interaction with the potential, and no electron or vacancy accumulation in 180°domain structure was observed. Polarization charge density is believed to be the origin of this difference. © 2008 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleInteraction of O vacancies and domain structures in single crystal BaTi O3: Two-dimensional ferroelectric modelen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=77&issue=9&spage=094104&epage=1 &date=2008&atitle=Interaction+of+O+vacancies+and+domain+structures+in+single+crystal+BaTiO3:+two-dimensional+ferroelectric+modelen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.77.094104en_HK
dc.identifier.scopuseid_2-s2.0-41149159094en_HK
dc.identifier.hkuros144615-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-41149159094&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume77en_HK
dc.identifier.issue9en_HK
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000254542500036-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHong, L=23985073500en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.scopusauthoridDu, QG=13103720500en_HK
dc.identifier.scopusauthoridLi, JY=12759616100en_HK

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