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Conference Paper: Simulation of surface effects in energy dissipation of ultrahighfrequency (UHF) nanocantilevers

TitleSimulation of surface effects in energy dissipation of ultrahighfrequency (UHF) nanocantilevers
Authors
KeywordsNanoresonator
Quality factor
Surface area to volume ratio
Issue Date2008
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2008, v. 6926 How to Cite?
AbstractDevices composed of nanoelectromechanical systems (NEMS) possess distinguished properties which make them quite suitable for a variety of applications including ultra-high-frequency (UHF) resonators. However, most GHz resonators have low quality factor even though it has been well above 10 3∼ 10 5 for very-high-frequency (VHF) microresonators. The motivation for our investigation of single crystal silicon nanoresonator arises from both its technological importance and its extraordinary surface effects. Our simulation results show that the quality factor decreased in a nearly linear manner as the surface area to volume ratio (SVR) was increased, which suggests that surface losses play a significant role in determining the quality factor of nanoresonators.
Persistent Identifierhttp://hdl.handle.net/10722/57145
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorYan, Ken_HK
dc.contributor.authorSoh, AKen_HK
dc.date.accessioned2010-04-12T01:27:13Z-
dc.date.available2010-04-12T01:27:13Z-
dc.date.issued2008en_HK
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2008, v. 6926en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/57145-
dc.description.abstractDevices composed of nanoelectromechanical systems (NEMS) possess distinguished properties which make them quite suitable for a variety of applications including ultra-high-frequency (UHF) resonators. However, most GHz resonators have low quality factor even though it has been well above 10 3∼ 10 5 for very-high-frequency (VHF) microresonators. The motivation for our investigation of single crystal silicon nanoresonator arises from both its technological importance and its extraordinary surface effects. Our simulation results show that the quality factor decreased in a nearly linear manner as the surface area to volume ratio (SVR) was increased, which suggests that surface losses play a significant role in determining the quality factor of nanoresonators.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 2008 Society of Photo-Optical Instrumentation Engineers.This paper was published in S P I E - the International Society for Optical Proceedings and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations viaelectronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.subjectNanoresonatoren_HK
dc.subjectQuality factoren_HK
dc.subjectSurface area to volume ratioen_HK
dc.titleSimulation of surface effects in energy dissipation of ultrahighfrequency (UHF) nanocantileversen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=6926&spage=69260X&epage=1 &date=2008&atitle=Simulation+of+surface+effects+in+energy+dissipation+of+ultra-high-frequency+(UHF)+nanocantileversen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.775386en_HK
dc.identifier.scopuseid_2-s2.0-44349163567en_HK
dc.identifier.hkuros144667-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44349163567&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6926en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, K=7102869239en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK

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