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postgraduate thesis: Reliability study of InGaN/GaN light-emitting diode

TitleReliability study of InGaN/GaN light-emitting diode
Authors
Advisors
Advisor(s):Choi, HWLai, PT
Issue Date2009
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Li, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415
DegreeMaster of Philosophy
SubjectLight emitting diodes.
Diodes, Semiconductor.
Electroluminescence.
Dept/ProgramElectrical and Electronic Engineering

 

DC FieldValueLanguage
dc.contributor.advisorChoi, HW-
dc.contributor.advisorLai, PT-
dc.contributor.authorLi, Zonglin-
dc.contributor.author李宗林-
dc.date.issued2009-
dc.identifier.citationLi, Z. [李宗林]. (2009). Reliability study of InGaN/GaN light-emitting diode. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4322415-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B43224155-
dc.subject.lcshLight emitting diodes.-
dc.subject.lcshDiodes, Semiconductor.-
dc.subject.lcshElectroluminescence.-
dc.titleReliability study of InGaN/GaN light-emitting diode-
dc.typePG_Thesis-
dc.identifier.hkulb4322415-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4322415-
dc.date.hkucongregation2009-

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