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postgraduate thesis: Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride

TitlePositron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride
Authors
Advisors
Issue Date2009
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Cheng, C. [鄭仲材]. (2009). Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4327857
DegreeDoctor of Philosophy
SubjectGallium nitride.
Aluminum nitride.
Positron beams.
Semiconductors - Spectra.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorBeling, CD-
dc.contributor.advisorFung, SHY-
dc.contributor.authorCheng, Chung-choi.-
dc.contributor.author鄭仲材.-
dc.date.issued2009-
dc.identifier.citationCheng, C. [鄭仲材]. (2009). Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4327857-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B43278577-
dc.subject.lcshGallium nitride.-
dc.subject.lcshAluminum nitride.-
dc.subject.lcshPositron beams.-
dc.subject.lcshSemiconductors - Spectra.-
dc.titlePositron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride-
dc.typePG_Thesis-
dc.identifier.hkulb4327857-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4327857-
dc.date.hkucongregation2010-

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