File Download
Supplementary
-
Citations:
- Appears in Collections:
postgraduate thesis: A study of implantation and irradiation induced deep-level defects in 6H-SiC
| Title | A study of implantation and irradiation induced deep-level defects in 6H-SiC |
|---|---|
| Authors | |
| Advisors | Advisor(s):Beling, CD |
| Issue Date | 1998 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Gong, M. [龔敏]. (1998). A study of implantation and irradiation induced deep-level defects in 6H-SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123849 |
| Degree | Doctor of Philosophy |
| Subject | Ion implantation. Electron beams. Irradiation. Silicon carbide. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/56582 |
| HKU Library Item ID | b3123849 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Beling, CD | - |
| dc.contributor.author | Gong, Min | - |
| dc.contributor.author | 龔敏 | - |
| dc.date.issued | 1998 | - |
| dc.identifier.citation | Gong, M. [龔敏]. (1998). A study of implantation and irradiation induced deep-level defects in 6H-SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123849 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/56582 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B3123849X | - |
| dc.subject.lcsh | Ion implantation. | - |
| dc.subject.lcsh | Electron beams. | - |
| dc.subject.lcsh | Irradiation. | - |
| dc.subject.lcsh | Silicon carbide. | - |
| dc.title | A study of implantation and irradiation induced deep-level defects in 6H-SiC | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3123849 | - |
| dc.description.thesisname | Doctor of Philosophy | - |
| dc.description.thesislevel | Doctoral | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.5353/th_b3123849 | - |
| dc.date.hkucongregation | 1999 | - |
| dc.identifier.mmsid | 991012410149703414 | - |