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postgraduate thesis: Temperature dependent hall effect: studies ofGaN on sapphire

TitleTemperature dependent hall effect: studies ofGaN on sapphire
Authors
Advisors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Huang, Y. [黃燕]. (2002). Temperature dependent hall effect : studies of GaN on sapphire. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4257706
DegreeMaster of Philosophy
SubjectGallium nitride.
Sapphires.
Hall effect.
Semiconductor films.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorBeling, CD-
dc.contributor.authorHuang, Yan-
dc.contributor.author黃燕-
dc.date.issued2002-
dc.identifier.citationHuang, Y. [黃燕]. (2002). Temperature dependent hall effect : studies of GaN on sapphire. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4257706-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B42577068-
dc.subject.lcshGallium nitride.-
dc.subject.lcshSapphires.-
dc.subject.lcshHall effect.-
dc.subject.lcshSemiconductor films.-
dc.titleTemperature dependent hall effect: studies ofGaN on sapphire-
dc.typePG_Thesis-
dc.identifier.hkulb4257706-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4257706-
dc.date.hkucongregation2003-

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