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postgraduate thesis: Studies of electron irradiation induced deep level defects in p-type 6H-SIC

TitleStudies of electron irradiation induced deep level defects in p-type 6H-SIC
Authors
Advisors
Issue Date2009
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
DegreeMaster of Philosophy
SubjectSilicon carbide - Defects.
Deep level transient spectroscopy.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorLing, FCC-
dc.contributor.authorLuo, Jiaming-
dc.contributor.author羅佳明-
dc.date.issued2009-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B41758158-
dc.subject.lcshSilicon carbide - Defects.-
dc.subject.lcshDeep level transient spectroscopy.-
dc.titleStudies of electron irradiation induced deep level defects in p-type 6H-SIC-
dc.typePG_Thesis-
dc.identifier.hkulb4175815-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4175815-
dc.date.hkucongregation2009-

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