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Postgraduate Thesis: Studies of electron irradiation induced deep level defects in p-type 6H-SIC
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TitleStudies of electron irradiation induced deep level defects in p-type 6H-SIC
 
AuthorsLuo, Jiaming
羅佳明
 
Issue Date2009
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
AdvisorsFung, SHY
Ling, FCC
 
DegreeMaster of Philosophy
 
SubjectSilicon carbide - Defects.
Deep level transient spectroscopy.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b4175815
 
DC FieldValue
dc.contributor.advisorFung, SHY
 
dc.contributor.advisorLing, FCC
 
dc.contributor.authorLuo, Jiaming
 
dc.contributor.author羅佳明
 
dc.date.hkucongregation2009
 
dc.date.issued2009
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4175815
 
dc.identifier.hkulb4175815
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B41758158
 
dc.subject.lcshSilicon carbide - Defects.
 
dc.subject.lcshDeep level transient spectroscopy.
 
dc.titleStudies of electron irradiation induced deep level defects in p-type 6H-SIC
 
dc.typePG_Thesis
 
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