Postgraduate Thesis: Studies of electron irradiation induced deep level defects in p-type 6H-SIC

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TitleStudies of electron irradiation induced deep level defects in p-type 6H-SIC
AuthorsLuo, Jiaming
羅佳明
Issue Date2009
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
AdvisorsFung, SHY
Ling, FCC
DegreeMaster of Philosophy
SubjectSilicon carbide - Defects.
Deep level transient spectroscopy.
Dept/ProgramPhysics
DOIhttp://dx.doi.org/10.5353/th_b4175815
DC Field
Value
dc.contributor.advisorFung, SHY
dc.contributor.advisorLing, FCC
dc.contributor.authorLuo, Jiaming
dc.contributor.author羅佳明
dc.date.hkucongregation2009
dc.date.issued2009
dc.description.naturepublished_or_final_version
dc.description.thesisdisciplinePhysics
dc.description.thesislevelmaster's
dc.description.thesisnameMaster of Philosophy
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4175815
dc.identifier.hkulb4175815
dc.languageeng
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
dc.relation.ispartofHKU Theses Online (HKUTO)
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.source.urihttp://hub.hku.hk/bib/B41758158
dc.subject.lcshSilicon carbide - Defects.
dc.subject.lcshDeep level transient spectroscopy.
dc.titleStudies of electron irradiation induced deep level defects in p-type 6H-SIC
dc.typePG_Thesis