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Postgraduate Thesis: Wide band gap nanomaterials and their applications
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TitleWide band gap nanomaterials and their applications
 
AuthorsZhang, Shaolin
張少林
 
Issue Date2009
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
AdvisorsDjurisic, A
Xie, MH
 
DegreeMaster of Philosophy
 
SubjectGallium nitride.
Zinc oxide.
Wide gap semiconductors - Materials.
Nanostructured materials.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b4175822
 
DC FieldValue
dc.contributor.advisorDjurisic, A
 
dc.contributor.advisorXie, MH
 
dc.contributor.authorZhang, Shaolin
 
dc.contributor.author張少林
 
dc.date.hkucongregation2009
 
dc.date.issued2009
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b4175822
 
dc.identifier.hkulb4175822
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B41758225
 
dc.subject.lcshGallium nitride.
 
dc.subject.lcshZinc oxide.
 
dc.subject.lcshWide gap semiconductors - Materials.
 
dc.subject.lcshNanostructured materials.
 
dc.titleWide band gap nanomaterials and their applications
 
dc.typePG_Thesis
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.advisor>Djurisic, A</contributor.advisor>
<contributor.advisor>Xie, MH</contributor.advisor>
<contributor.author>Zhang, Shaolin</contributor.author>
<contributor.author>&#24373;&#23569;&#26519;</contributor.author>
<date.issued>2009</date.issued>
<language>eng</language>
<publisher>The University of Hong Kong (Pokfulam, Hong Kong)</publisher>
<relation.ispartof>HKU Theses Online (HKUTO)</relation.ispartof>
<rights>The author retains all proprietary rights, (such as patent rights) and the right to use in future works.</rights>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<source.uri>http://hub.hku.hk/bib/B41758225</source.uri>
<subject.lcsh>Gallium nitride.</subject.lcsh>
<subject.lcsh>Zinc oxide.</subject.lcsh>
<subject.lcsh>Wide gap semiconductors - Materials.</subject.lcsh>
<subject.lcsh>Nanostructured materials.</subject.lcsh>
<title>Wide band gap nanomaterials and their applications</title>
<type>PG_Thesis</type>
<identifier.hkul>b4175822</identifier.hkul>
<description.thesisname>Master of Philosophy</description.thesisname>
<description.thesislevel>master&apos;s</description.thesislevel>
<description.thesisdiscipline>Physics</description.thesisdiscipline>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.5353/th_b4175822</identifier.doi>
<date.hkucongregation>2009</date.hkucongregation>
<bitstream.url>http://hub.hku.hk/bitstream/10722/54659/3/FullText.pdf</bitstream.url>
</item>