Conference Paper: An economical fabrication technique for SIMOX using plasma immersion ion implantation
| Title | An economical fabrication technique for SIMOX using plasma immersion ion implantation |
|---|---|
| Authors | Min, J Chu, PK Cheng, YC Liu, JB Iyer, SSK Cheung, NW |
| Keywords | Computers Circuits |
| Issue Date | 1995 |
| Publisher | IEEE. |
| Citation | Proceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256 [How to Cite?] DOI: http://dx.doi.org/10.1109/ICSICT.1995.500078 |
| Abstract | Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized |
| DOI | http://dx.doi.org/10.1109/ICSICT.1995.500078 |
| dc.contributor.author | Min, J |
|---|---|
| dc.contributor.author | Chu, PK |
| dc.contributor.author | Cheng, YC |
| dc.contributor.author | Liu, JB |
| dc.contributor.author | Iyer, SSK |
| dc.contributor.author | Cheung, NW |
| dc.date.accessioned | 2009-04-03T07:40:23Z |
| dc.date.available | 2009-04-03T07:40:23Z |
| dc.date.issued | 1995 |
| dc.description.abstract | Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized |
| dc.description.nature | published_or_final_version |
| dc.identifier.citation | Proceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256 [How to Cite?] DOI: http://dx.doi.org/10.1109/ICSICT.1995.500078 |
| dc.identifier.doi | http://dx.doi.org/10.1109/ICSICT.1995.500078 |
| dc.identifier.hkuros | 20174 |
| dc.identifier.uri | http://hdl.handle.net/10722/54229 |
| dc.language | eng |
| dc.publisher | IEEE. |
| dc.rights | ©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| dc.rights | Creative Commons: Attribution 3.0 Hong Kong License |
| dc.subject | Computers |
| dc.subject | Circuits |
| dc.title | An economical fabrication technique for SIMOX using plasma immersion ion implantation |
| dc.type | Conference_Paper |