File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: An economical fabrication technique for SIMOX using plasma immersion ion implantation

TitleAn economical fabrication technique for SIMOX using plasma immersion ion implantation
Authors
KeywordsComputers
Circuits
Issue Date1995
PublisherIEEE.
Citation
Proceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256 How to Cite?
Abstract
Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized
Persistent Identifierhttp://hdl.handle.net/10722/54229

 

DC FieldValueLanguage
dc.contributor.authorMin, Jen_HK
dc.contributor.authorChu, PKen_HK
dc.contributor.authorCheng, YCen_HK
dc.contributor.authorLiu, JBen_HK
dc.contributor.authorIyer, SSKen_HK
dc.contributor.authorCheung, NWen_HK
dc.date.accessioned2009-04-03T07:40:23Z-
dc.date.available2009-04-03T07:40:23Z-
dc.date.issued1995en_HK
dc.identifier.citationProceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54229-
dc.description.abstractBuried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesizeden_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleAn economical fabrication technique for SIMOX using plasma immersion ion implantationen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/ICSICT.1995.500078en_HK
dc.identifier.hkuros20174-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats