File Download
 
Links for fulltext
(May Require Subscription)
 
Supplementary

Conference Paper: An economical fabrication technique for SIMOX using plasma immersion ion implantation
  • Basic View
  • Metadata View
  • XML View
TitleAn economical fabrication technique for SIMOX using plasma immersion ion implantation
 
AuthorsMin, J
Chu, PK
Cheng, YC
Liu, JB
Iyer, SSK
Cheung, NW
 
KeywordsComputers
Circuits
 
Issue Date1995
 
PublisherIEEE.
 
CitationProceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256 [How to Cite?]
DOI: http://dx.doi.org/10.1109/ICSICT.1995.500078
 
AbstractBuried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized
 
DOIhttp://dx.doi.org/10.1109/ICSICT.1995.500078
 
DC FieldValue
dc.contributor.authorMin, J
 
dc.contributor.authorChu, PK
 
dc.contributor.authorCheng, YC
 
dc.contributor.authorLiu, JB
 
dc.contributor.authorIyer, SSK
 
dc.contributor.authorCheung, NW
 
dc.date.accessioned2009-04-03T07:40:23Z
 
dc.date.available2009-04-03T07:40:23Z
 
dc.date.issued1995
 
dc.description.abstractBuried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3×1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized
 
dc.description.naturepublished_or_final_version
 
dc.identifier.citationProceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT '95, Beijing, China, October 24-28, 1995, p. 253-256 [How to Cite?]
DOI: http://dx.doi.org/10.1109/ICSICT.1995.500078
 
dc.identifier.doihttp://dx.doi.org/10.1109/ICSICT.1995.500078
 
dc.identifier.hkuros20174
 
dc.identifier.urihttp://hdl.handle.net/10722/54229
 
dc.languageeng
 
dc.publisherIEEE.
 
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectComputers
 
dc.subjectCircuits
 
dc.titleAn economical fabrication technique for SIMOX using plasma immersion ion implantation
 
dc.typeConference_Paper
 
<?xml encoding="utf-8" version="1.0"?>
<item><contributor.author>Min, J</contributor.author>
<contributor.author>Chu, PK</contributor.author>
<contributor.author>Cheng, YC</contributor.author>
<contributor.author>Liu, JB</contributor.author>
<contributor.author>Iyer, SSK</contributor.author>
<contributor.author>Cheung, NW</contributor.author>
<date.accessioned>2009-04-03T07:40:23Z</date.accessioned>
<date.available>2009-04-03T07:40:23Z</date.available>
<date.issued>1995</date.issued>
<identifier.citation>Proceedings of the 4th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT &apos;95, Beijing, China, October 24-28, 1995, p. 253-256</identifier.citation>
<identifier.uri>http://hdl.handle.net/10722/54229</identifier.uri>
<description.abstract>Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a dose of 3&#215;1017 cm-2 of oxygen was implanted in about three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RES) were used to characterize the wafers. Our results indicate that a continuous buried oxide layer with a single crystal silicon overlayer was synthesized</description.abstract>
<language>eng</language>
<publisher>IEEE.</publisher>
<rights>&#169;1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.</rights>
<rights>Creative Commons: Attribution 3.0 Hong Kong License</rights>
<subject>Computers</subject>
<subject>Circuits</subject>
<title>An economical fabrication technique for SIMOX using plasma immersion ion implantation</title>
<type>Conference_Paper</type>
<description.nature>published_or_final_version</description.nature>
<identifier.doi>10.1109/ICSICT.1995.500078</identifier.doi>
<identifier.hkuros>20174</identifier.hkuros>
<bitstream.url>http://hub.hku.hk/bitstream/10722/54229/1/20174.pdf</bitstream.url>
</item>