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Conference Paper: Characterization of linewidth variation on 248- and 193-nm exposure tools

TitleCharacterization of linewidth variation on 248- and 193-nm exposure tools
Authors
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
S P I E Conference on Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 259-264 How to Cite?
AbstractThe line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary, attenuated PSM with assist features and alternating PSM reticles. Despite the fact that the 193 nm tool has a lower NA and that the data was generated using a binary reticle, the 193 nm lithographic process allows for the line-width values to be pushed lower than previously achieved with 248 nm lithographic processes. The 3-sigma values from 4000 electrical linewidth measurements per wafer (160 measurements per 25*25 mm field, 25 fields per wafer) were calculated for different mask features. The 193 nm process was capable of reaching line-widths needed for future generations of advance logic chips. Compared to the 193 nm process utilizing a binary reticle, only the 248 nm processes utilizing either an attenuated PSM with assist features or an alternating PSM reticle had similarly low line-width variation. The 248 nm processes utilizing a binary reticle had higher line-width variation even at larger poly gate conductor line-widths.
DescriptionProceedings of S P I E - the International Society for Optical
Persistent Identifierhttp://hdl.handle.net/10722/54072
ISSN

 

DC FieldValueLanguage
dc.contributor.authorGabor, Aen_HK
dc.contributor.authorBrunner, Ten_HK
dc.contributor.authorChen, Jen_HK
dc.contributor.authorChen, Nen_HK
dc.contributor.authorDeshpande, Sen_HK
dc.contributor.authorFerguson, Ren_HK
dc.contributor.authorHorak, DVen_HK
dc.contributor.authorHolmes, Sen_HK
dc.contributor.authorLiebmann, Len_HK
dc.contributor.authorMansfield, Sen_HK
dc.contributor.authorMolless, Aen_HK
dc.contributor.authorProgler, CJen_HK
dc.contributor.authorRabidoux, Ren_HK
dc.contributor.authorRyan, Den_HK
dc.contributor.authorTalvi, Pen_HK
dc.contributor.authorTsou, Len_HK
dc.contributor.authorVampatella, Ben_HK
dc.contributor.authorWong, AKKen_HK
dc.contributor.authorYang, Qen_HK
dc.contributor.authorYu, CFen_HK
dc.date.accessioned2009-04-03T07:35:59Z-
dc.date.available2009-04-03T07:35:59Z-
dc.date.issued2001en_HK
dc.identifier.citationS P I E Conference on Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 259-264en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/54072-
dc.descriptionProceedings of S P I E - the International Society for Opticalen_HK
dc.description.abstractThe line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary, attenuated PSM with assist features and alternating PSM reticles. Despite the fact that the 193 nm tool has a lower NA and that the data was generated using a binary reticle, the 193 nm lithographic process allows for the line-width values to be pushed lower than previously achieved with 248 nm lithographic processes. The 3-sigma values from 4000 electrical linewidth measurements per wafer (160 measurements per 25*25 mm field, 25 fields per wafer) were calculated for different mask features. The 193 nm process was capable of reaching line-widths needed for future generations of advance logic chips. Compared to the 193 nm process utilizing a binary reticle, only the 248 nm processes utilizing either an attenuated PSM with assist features or an alternating PSM reticle had similarly low line-width variation. The 248 nm processes utilizing a binary reticle had higher line-width variation even at larger poly gate conductor line-widths.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 2001 Society of Photo-Optical Instrumentation Engineers.This paper was published in Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 259-264 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations viaelectronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.titleCharacterization of linewidth variation on 248- and 193-nm exposure toolsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4346&spage=259&epage=264&date=2001&atitle=Characterization+of+linewidth+variation+on+248-+and+193-nm+exposure+toolsen_HK
dc.identifier.emailWong, AKK: awong@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.435708en_HK
dc.identifier.scopuseid_2-s2.0-0011247034-
dc.identifier.hkuros58720-

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