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Conference Paper: Quantum well intermixing: materials modeling and device physics

TitleQuantum well intermixing: materials modeling and device physics
Authors
KeywordsQuantum Well Intermixing
Thermal Interdiffusion
Optical Properties of Quantum Well
Optical Devices
Optoelectronic Devices
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
S P I E Conference on Physics and Simulation of Otoelectronic Devices VI, San Jose, California, USA, 26-30 January, 1998, v. 3283, p. 336-349 How to Cite?
AbstractQuantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the heterointerface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The interdiffusion mechanism is no longer confined to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or for multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optics effects are discussed. In addition, this paper will place a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-of-the-art results will be summarized with an emphasis on its future development and directions.
Persistent Identifierhttp://hdl.handle.net/10722/54066
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2009-04-03T07:35:51Z-
dc.date.available2009-04-03T07:35:51Z-
dc.date.issued1998en_HK
dc.identifier.citationS P I E Conference on Physics and Simulation of Otoelectronic Devices VI, San Jose, California, USA, 26-30 January, 1998, v. 3283, p. 336-349en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/54066-
dc.description.abstractQuantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the heterointerface. The intermixed structures created by both impurity induced and impurity free or vacancy promoted processes have recently attracted high attention. The interdiffusion mechanism is no longer confined to a single phase diffusion for two constituent atoms, but it can now consist of two or multiple phases and/or for multiple species, such as three cations interdiffusion and two pairs of cation-anion interdiffusion. A review on the impact of intermixing on device physics is presented with many interesting features. For instance, both compressive or tensile strain materials and both blue or red shifts in the bandgap can be achieved depending on the types of intermixing. The recent advancement in intermixing modified optical properties, such as absorption, refractive index as well as electro-optics effects are discussed. In addition, this paper will place a strong emphasis on the device application of the intermixing technology. The advantage of being able to tune the material provides a way to improve the performance of photodetectors and modulators. Attractive distributed-feedback and vertical cavity laser dynamics have been shown due to some unique device physics of the quantum well intermixing. Several state-of-the-art results will be summarized with an emphasis on its future development and directions.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 1998 Society of Photo-Optical Instrumentation Engineers.This paper was published in S P I E Conference on Physics and Simulation of Otoelectronic Devices and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations viaelectronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.subjectQuantum Well Intermixingen_HK
dc.subjectThermal Interdiffusionen_HK
dc.subjectOptical Properties of Quantum Wellen_HK
dc.subjectOptical Devicesen_HK
dc.subjectOptoelectronic Devicesen_HK
dc.titleQuantum well intermixing: materials modeling and device physicsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3283&spage=336&epage=349&date=1998&atitle=Quantum+well+intermixing:+materials+modeling+and+device+physicsen_HK
dc.identifier.emailLi, EH: ehli@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.316664en_HK
dc.identifier.scopuseid_2-s2.0-57649140524-
dc.identifier.hkuros38005-

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