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Conference Paper: Effect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55µm operation wavelength

TitleEffect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55µm operation wavelength
Authors
KeywordsPhysics engineerning chemistry
Issue Date1996
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Optoelectronic materials: ordering, composition modulation, and self-assembled structures, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28-30 November 1995, v. 417, p. 283-288 How to Cite?
AbstractAnalysis, of high indium concentration in interdiffused Ino.65Gso.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5µm for applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55nm and which base on the more matured and reliable GaAs technology.
Persistent Identifierhttp://hdl.handle.net/10722/54053
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorChan, KSen_HK
dc.date.accessioned2009-04-03T07:35:32Z-
dc.date.available2009-04-03T07:35:32Z-
dc.date.issued1996en_HK
dc.identifier.citationOptoelectronic materials: ordering, composition modulation, and self-assembled structures, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 28-30 November 1995, v. 417, p. 283-288en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54053-
dc.description.abstractAnalysis, of high indium concentration in interdiffused Ino.65Gso.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5µm for applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55nm and which base on the more matured and reliable GaAs technology.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineerning chemistryen_HK
dc.titleEffect of interdiffusion on the subbands in an In0.65Gs0.35As/GaAs multiple-quantum well structure on GaAs substrate at 1.55µm operation wavelengthen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=417&spage=283&epage=288&date=1996&atitle=Effect+of+interdiffusion+on+the+subbands+in+an+In0.65Gs0.35As/GaAs+multiple-quantum+well+structure+on+GaAs+substrate+at+1.55µm+operation+wavelengthen_HK
dc.identifier.emailLi, EH: ehli@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK

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