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Conference Paper: Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides

TitleImpurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides
Authors
KeywordsComputers
Issue Date1995
PublisherIEEE.
Citation
IEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 85-88 How to Cite?
AbstractThe impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.
Persistent Identifierhttp://hdl.handle.net/10722/54047
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, ATHen_HK
dc.contributor.authorLo, KMen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2009-04-03T07:35:23Z-
dc.date.available2009-04-03T07:35:23Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 85-88en_HK
dc.identifier.issn0886-1420en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54047-
dc.description.abstractThe impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectComputersen_HK
dc.titleImpurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguidesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0886-1420&volume=&spage=85&epage=88&date=1995&atitle=Impurity+induced+disordering+produced+lateral+optical+confinement+in+AlGaAs+and+InGaAs+(on+GaAs)+quantum+well+waveguidesen_HK
dc.identifier.emailLi, EH: ehli@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TENCON.1995.496342en_HK
dc.identifier.hkuros9371-

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