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Conference Paper: Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides
Title | Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides |
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Authors | |
Keywords | Computers |
Issue Date | 1995 |
Publisher | IEEE. |
Citation | IEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 85-88 How to Cite? |
Abstract | The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers. |
Persistent Identifier | http://hdl.handle.net/10722/54047 |
ISSN |
DC Field | Value | Language |
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dc.contributor.author | Li, ATH | en_HK |
dc.contributor.author | Lo, KM | en_HK |
dc.contributor.author | Li, EH | en_HK |
dc.date.accessioned | 2009-04-03T07:35:23Z | - |
dc.date.available | 2009-04-03T07:35:23Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | IEEE Region 10 International Conference on Microelectronics and VLSI, 6-10 November 1995, p. 85-88 | en_HK |
dc.identifier.issn | 0886-1420 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/54047 | - |
dc.description.abstract | The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers. | en_HK |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.rights | ©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Computers | en_HK |
dc.title | Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0886-1420&volume=&spage=85&epage=88&date=1995&atitle=Impurity+induced+disordering+produced+lateral+optical+confinement+in+AlGaAs+and+InGaAs+(on+GaAs)+quantum+well+waveguides | en_HK |
dc.identifier.email | Li, EH: ehli@eee.hku.hk | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/TENCON.1995.496342 | en_HK |
dc.identifier.hkuros | 9371 | - |
dc.identifier.issnl | 0886-1420 | - |