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Conference Paper: Single versus double ion implantation defined AlGaAs/GaAs quantumwell waveguide

TitleSingle versus double ion implantation defined AlGaAs/GaAs quantumwell waveguide
Authors
KeywordsPhysics
Optics
Issue Date1997
PublisherIEEE.
Citation
The 10th IEEE Lasers and Electro-Optics Society Annual Meeting, San Francisco, California, USA, 10-13 November 1997, v. 2, p. 453-454 How to Cite?
AbstractThe purpose of this work is to investigate ion implantations on a two-dimensional optical waveguide structure. The waveguide structure, to be analyzed here consists of an AlGaAs-GaAs MQW on a thick AlGaAs buffer layer.
Persistent Identifierhttp://hdl.handle.net/10722/54041
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLi, ATHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2009-04-03T07:35:14Z-
dc.date.available2009-04-03T07:35:14Z-
dc.date.issued1997en_HK
dc.identifier.citationThe 10th IEEE Lasers and Electro-Optics Society Annual Meeting, San Francisco, California, USA, 10-13 November 1997, v. 2, p. 453-454en_HK
dc.identifier.issn1092-8081en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54041-
dc.description.abstractThe purpose of this work is to investigate ion implantations on a two-dimensional optical waveguide structure. The waveguide structure, to be analyzed here consists of an AlGaAs-GaAs MQW on a thick AlGaAs buffer layer.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectPhysicsen_HK
dc.subjectOpticsen_HK
dc.titleSingle versus double ion implantation defined AlGaAs/GaAs quantumwell waveguideen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1092-8081&volume=2&spage=453&epage=454&date=1997&atitle=Single+versus+double+ion+implantation+defined+AlGaAs/GaAs+quantumwell+waveguideen_HK
dc.identifier.emailLi, EH: ehli@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LEOS.1997.645513en_HK
dc.identifier.hkuros37985-

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